MnWO4 nano-plate photosensitive field-effect transistor and manufacturing method thereof

Abstract

The invention belongs to the inorganic semiconductor nanomaterial technology and device application field, and especially relates to a MnWO4 nano-plate photosensitive field-effect transistor and a manufacturing method thereof. The MnWO4 nano-plate photosensitive field-effect transistor comprises a grid metal electrode, Si substrate and a SiO2 insulation layer in sequence from the bottom up. The upper surface of the SiO2 insulation layer is provided with a single MnWO4 nano-plate, a source metal electrode and a drain metal electrode. The source metal electrode and the drain metal electrode arecovered on the two ends of the single MnWO4 nano-plate respectively and form ohmic contact. The method produces the MnWO4 nano-plate having large area, high yield and excellent crystal quality througha micro-arc oxidation method; and furthermore, the MnWO4 nano-plate is utilized to prepare the MnWO4 nano-plate photosensitive field-effect transistor in a back-gate structure. The method is simple in process, is low in cost, can grow the MnWO4 nano-plate material having high crystal quality on a large scale, and facilitates industrial promotion.

Description

Technical field [0001] The invention belongs to the field of inorganic semiconductor nano-material technology and device application, in particular to a MnWO 4 Nanoplate photosensitive field effect transistor and its manufacturing method. Background technique [0002] Field effect transistor (TFT) is a voltage control device that controls the conductivity of solid materials by changing the electric field. Field-effect transistors are widely used in large-scale integrated circuits and display panels, and are the basis of analog and digital integrated circuits. They have the advantages of high integration, large input impedance, stable performance and mature manufacturing processes. In 1951, Shockley first proposed the concept of a photosensitive field-effect transistor, which combined the light-induced effect of semiconductors with the field effect of transistors to enable it to have a photodetection function. Compared with photodiodes, photo-sensitive field-effect transistors op...

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Problems solved by technology

However, due to the current large-scale preparation of 1D MnWO with high crystalline quality 4 There are still many difficulties in nanomaterials, based on 1D MnWO 4 High-performance photosensitive field-effect transistors of nanomaterials have not been reported yet

Moreover, the existing photosensitive field effect transistors based on 1D nanomaterials generally have problems such as low photoresponsivity, slow response time, and high threshold voltage, which are not conducive to industrial applications.

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