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Trench type double barrier Schottky diode and preparation method thereof

A Schottky diode, double-barrier technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of increased conduction loss, increased forward voltage drop of diodes, etc., to enhance surge capability, The effect of increasing the voltage resistance and high temperature resistance, and reducing the potential barrier

Inactive Publication Date: 2018-06-05
BEIJING CENTURY GOLDRAY SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

A high potential barrier can make the device withstand higher withstand voltage and high temperature application capabilities, but a high potential barrier increases the forward voltage drop of the diode and increases the conduction loss

Method used

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  • Trench type double barrier Schottky diode and preparation method thereof
  • Trench type double barrier Schottky diode and preparation method thereof
  • Trench type double barrier Schottky diode and preparation method thereof

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Embodiment Construction

[0033] The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0034] The invention reduces the Schottky contact potential barrier of the device by improving the device structure and process without changing the Schottky contact metal, and finally reduces the forward voltage drop and conduction loss of the device.

[0035] On the SiC substrate of the first conductivity type, a buffer layer of the first conductivity type is epitaxially, the thickness of the buffer layer is between 0.5-2 μm, and the concentration is 1E18cm -3 Left and right; epitaxial drift ...

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Abstract

The invention discloses a trench type double barrier Schottky diode and a preparation method thereof. According to the invention, an active region of the Schottky diode is of a trench structure, the ion implantation concentration of a barrier modulation layer at the top of a table board is higher than the concentration of a trench and a drift layer; the depth of a groove in the active region is dt, and the width is Wt; the width of the table board is Wm, and the junction depth of a p+ region is dp; and the width Wt is greater than 1 micron, the width Wm is greater than 0.5 micron, the depth dtis greater than 0.5 micron, and the junction depth dp is greater than 0.5 micron. By using an image force barrier reducing method, low-barrier Schottky contact is formed on the table board, conventional-barrier Schottky contact is formed on the side wall of the table board, and conducting channels are increased. p+ doping is performed at the bottom of the trench, ohmic contact is carried out, a parallel pn diode is formed, and the surge capacity of the device is enhanced. Meanwhile, the Schottky conducting channels are shielded, and the voltage resistance and high temperature resistance of the device are enhanced. The SIC Schottky diode can reduce the barrier of the device and maintain excellent high voltage resistance, high temperature resistance and surge capability at the same time.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a trench type double potential barrier Schottky diode and a preparation method thereof. Background technique [0002] Since the Schottky diode is a unipolar device, there is almost no reverse recovery current, and it has better reverse recovery characteristics than the pn diode. Schottky diodes of wide bandgap semiconductor silicon carbide (SiC) can withstand voltages above 3300V, and have better advantages in high-voltage and high-frequency switching circuits. However, also due to the wide bandgap characteristics of silicon carbide materials, the potential barriers of SiC Schottky diodes are generally relatively high. For example, the potential barriers of Ti and MO commonly used in the industry are between 1.2-1.3eV, while the potential barriers of Ni and Pt The barrier is larger than 1.6eV. A high potential barrier can make the device withstand higher withstand voltage and high...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/45H01L29/47H01L21/329
CPCH01L29/45H01L29/47H01L29/6606H01L29/872
Inventor 倪炜江袁俊张敬伟孙安信
Owner BEIJING CENTURY GOLDRAY SEMICON CO LTD
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