Over-temperature protection circuit, semiconductor device and fabrication method of semiconductor device

Abstract

The invention provides an over-temperature protection circuit, a semiconductor device and a fabrication method of the semiconductor device. The over-temperature protection circuit comprises a currentsource, a temperature sampling tube, a comparator, a control signal generation unit and an MOS field-effect transistor, wherein the current source is used for providing a constant-current source, thetemperature sampling tube is used for detecting a temperature, the comparator is used for generating a temperature detection signal according to the detected temperature, the control signal generationunit is used for generating a temperature control signal according to the temperature detection signal, and the MOS field-effect transistor is used for achieving over-temperature protection by switch-off or switch-on according to the temperature control signal. The real-time temperature can be timely and accurately acquired by a temperature sampling device, so that the over-temperature protectioncircuit effectively works, an error during the heat transferring process is not needed to be considered, and the design of the over-temperature protection circuit is simplified; and meanwhile, the semiconductor device and a control module are integrated in a package tube shell by a joint sealing mode to form the over-temperature protection circuit, chips based on different processed are organically combined, and process complexity and high cost brought by a single chip for achieving the same function are prevented.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an over-temperature protection circuit, a semiconductor device and a preparation method thereof. Background technique [0002] Such as figure 1 Shown is a schematic structural diagram of an existing high-power power management chip 1, wherein the integrated circuit 11 is set as a control circuit in one chip, including a control module 112; the power device 12 is set in another chip, including a power switch tube 121; Both are integrated in one package. The high-power power management chip generates a lot of heat. In order to better protect the chip from being burned by excessive heat during work, a built-in temperature sampling device 111 is usually built in to cooperate with the control module 112 to achieve over-temperature protection. The existing temperature sampling The device 111 is generally provided in the integrated circuit 11 . [0003] The integrated circu...

AI Technical Summary

Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an over-temperature protection circuit, a semiconductor device and a preparation method thereof, which are used to solve the problem of poor temperature sensitivity of the over-temperature protection circuit in the prior art

Images