Preparation method of electron-doped double-layer graphene

A double-layer graphene, electron doping technology, applied in the field of graphene, can solve the problems such as difficulty in preparing double-layer graphene, and achieve the effects of low cost, innovative technical route and obvious effect

Active Publication Date: 2018-05-29
KUNMING INST OF PHYSICS
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Problems solved by technology

[0004] What the present invention is to solve is the existing difficult problem of preparing double-layer graphene, and provides a method for preparing electron-doped double-layer graphene by thermally evaporating melamine molecules on the surface of double-layer graphene to modulate the electrical properties of graphene method

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  • Preparation method of electron-doped double-layer graphene
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  • Preparation method of electron-doped double-layer graphene

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Embodiment 1

[0017] Example 1: A method for preparing electron-doped double-layer graphene, preparing large-area double-layer graphene by chemical vapor deposition, and then using thermal evaporation technology to evaporate a layer of melamine molecules on the surface of double-layer graphene to modulate graphene Electrical properties, the specific preparation steps are as follows:

[0018] 1) Prepare double-layer graphene on copper foil by chemical vapor deposition: put the copper foil substrate into the tube furnace, and then evacuate to below 1Pa; pass the mixed gas of hydrogen and argon into the tube furnace at 60 sccm In the furnace, the temperature was raised to 1000°C within 120 minutes; then methane was introduced at 20 sccm for 60 minutes, and the pressure in the tube furnace was kept at 1500 Pa at this time; after cooling down to room temperature, the mixed gas of hydrogen and argon was turned off, and the growth Bilayer graphene samples on the surface of copper foil;

[0019] 2...

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Abstract

The invention discloses a preparation method of electron-doped double-layer graphene, relates to graphene and particularly relates to a preparation method for evaporating and plating melamine molecules on the surface of the double-layer graphene by heat evaporation to prepare the electron-doped double-layer graphene with electric properties of graphene. The preparation method of the electron-dopeddouble-layer graphene is characterized by comprising the following steps of: adopting a chemical vapor deposition method to prepare large-area double-layer graphene, and then using a heat-evaporationtechnology to evaporate a layer of melamine molecules on the surface of the double-layer graphene. Compared with single-layer graphene, the technology has the maximum difference that the amount of mixed gas of hydrogen gas and argon gas is increased, the preparation time is prolonged; the thickness of the thin film covering on the surface of the double-layer graphene in the step 3) can be controlled by adjusting the amount of the melamine; due to doping of the melamine, the conduction type of the graphene can realize modulating action from strong p type to weak p type, so that a feasible scheme is provided for large-area n-type doping of the graphene.

Description

technical field [0001] The invention relates to graphene, in particular to a method for preparing electron-doped double-layer graphene by thermally evaporating melamine molecules on the surface of the double-layer graphene to modulate the electrical properties of the graphene. Background technique [0002] Graphene is a carbon atom sp 2 Orbital hybridization forms a two-dimensional material with a honeycomb structure. Since Konstantin Novoselov and Andre Geim discovered graphene and prepared the first graphene field-effect transistor in 2004, due to its high carrier mobility and wide spectral absorption However, due to the zero band gap and weak light absorption (2.3%) of the intrinsic single-layer graphene, the graphene-based photodetector has a small switching ratio and response The low efficiency limits its application in the field of optoelectronics. Opening the band gap of graphene to increase the switching ratio is very important for the application of graphene in t...

Claims

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Application Information

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IPC IPC(8): C01B32/194
CPCC01B2204/04C01B2204/22
Inventor 唐利斌姬荣斌项金钟胡松文赵梓妤康蓉秦强韩福忠
Owner KUNMING INST OF PHYSICS
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