A half-bridge igbt module with multiple chips connected in parallel

Abstract

The invention discloses a multi-chip parallel-connected half-bridge IGBT module. The module includes a heat-conducting bottom plate and a ceramic copper-clad substrate. Chips and bonding wires for connection are arranged on the ceramic copper-clad substrate. The chips form an upper bridge arm and a ceramic copper-clad substrate. The lower bridge arm, each bridge arm contains at least two IGBT chips, and each IGBT chip is attached with a freewheeling diode to form an IGBT chip unit. The IGBT chip units that make up each bridge arm are arranged vertically on the ceramic copper-clad substrate. The gates of all IGBT chips of the bridge arm point to the same direction, and the gates of each IGBT chip are connected to the gate bonding point on the copper clad substrate through independent bonding wires and finally connected through copper clad or bonding wires to the gate copper strips of the corresponding upper and lower bridge arms.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a design and implementation method for parallel connection of multiple chips inside an insulated gate bipolar transistor (IGBT) module. Background technique [0002] IGBT can not only withstand high voltage and provide high current, but also is easy to control. It is an important power device for motor control and power inverter. IGBT single chip, due to the limitation of chip size, the output current of a single chip usually does not exceed 200A. In order to control greater power, the output current of hundreds or even thousands of amperes can be obtained by parallel connection of multiple IGBT chips inside the power module. Therefore, the size of the IGBT module is flexible and changeable, and multiple IGBT chips can be integrated to obtain a large current output capability, which has been widely used in the industrial field. However, due to th...

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Problems solved by technology

However, due to the geometric size of the chip itself, as well as the limitation of the internal wiring and interconnection area of ​​the power module, it will cause a large distributed inductance inside the power module

This will lead to multiple IGBT chips connected in parallel. When turning on and off, the current borne by each IGBT chip will be unbalanced.

In severe cases, when the current borne by individual chips will far exceed that of other chips, when the device is running, the IGBT will be continuously turned on and off, which will cause its junction temperature to be much higher than other chips with lower currents.

In this case, the IGBT chip, which bears high current during switching, will greatly reduce reliability due to its high junction temperature, which will easily cause early damage to the module

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