Method for preparing silicon dioxide with high specific surface area by using tubular continuous flow method
A technology with high specific surface area and silicon dioxide, applied in the direction of silicon dioxide, silicon oxide, etc., can solve the problems of difficult to break through the specific surface area of silica, low production efficiency, hidden dangers, etc., to achieve uniform concentration of reactants, Full contact, the effect of eliminating mass transfer problems
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Embodiment 1
[0034] A method for preparing silicon dioxide with a high specific surface area by a tubular continuous flow method, comprising the following steps:
[0035] (1) Prepare ammonium salt solutions and silicon source aqueous solutions of different concentrations, add the silicon source solution into the ammonium salt solution, wherein the silicon concentration in the silicon source solution is 0.2mol / L, and the concentration of the salt solution is 2.0mol / L;
[0036] (2) Regulate reaction system temperature, reaction temperature is at 40 ℃;
[0037](3) regulate the flow rate of carbon dioxide gas and silicon source solution, the flow rate of carbon dioxide gas and silicon source solution is controlled at 20ml / min, 2ml / min respectively, carbon dioxide gas and silicon source liquid are passed through the tee of continuous flow reactor simultaneously, thereby Produce alternating segment flow of gas and liquid, and the liquid part separated by carbon dioxide bubbles is called a liquid...
Embodiment 2
[0041] As a comparison, silica was prepared using the traditional intermittent bubbling method, the specific method is as follows:
[0042] 1. Mix the silicon source solution with the salt solution, the concentration is the same as in Example 1.
[0043] 2. Pass carbon dioxide gas into the above-mentioned solution, and keep stirring, the temperature and the flow rate of carbon dioxide are the same as in Example 1.
[0044] 3. The aftertreatment method is the same as in Example 2.
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