A kind of preparation method of multiferroic heterojunction film

Abstract

A preparation method of a multi-ferric heterojunction thin film is characterized by comprising the steps of 1) combining a ferromagnetic thin film on a stable-structure ferroelectric thin film substrate by methods such as pulse laser deposition, magnetron sputtering or molecular beam epitaxy during preparation of the thin film to obtain a ferromagnetic / ferroelectric heterojunction thin film, wherein the ferroelectric thin film substrate is one or PMN-PT, BFO, PZT, BTO, PTO and PZN-PT, and the ferromagnetic thin film is one of Fe, Co, Ni, CoFe, CoFeB, FeNi, FeSi, FeSiAl and FeAl; and 2) placingthe ferromagnetic / ferroelectric heterojunction thin film prepared in the step 1) in a heat treatment furnace by interface control, introducing a nitrogen-containing gas at a constant rate, performingnitrogen impregnation processing for 0.5-48 hours under a temperature of 150-600 DEG C, reducing a temperature, cooling with the furnace to a room temperature, and taking out a sample, wherein the stable-structure ferroelectric thin film is not affected during the heat treatment process, nitrogen atoms can be impregnated into the ferromagnetic thin film to generate a gap solid solution or a new phase, cause lattice expansion and generate stress at an interface, and the nitrogen-containing gas is one of nitrogen, ammonia, nitrogen and hydrogen and ammonia and hydrogen.

Description

technical field [0001] The invention relates to a preparation method of a multiferroic heterojunction thin film, belonging to the field of material preparation. Background technique [0002] With the rapid development of the information industry, people's requirements for information storage technology are getting higher and higher, so a lot of research has begun to focus on information storage devices with small size, high density, fast speed, low energy consumption and long life. However, the size of semiconductor transistors is about to reach the physical limit predicted by the theory of traditional semiconductor manufacturing technology, and it is difficult to greatly improve the performance of information storage devices. Therefore, if we want to make further breakthroughs in the field of information storage, we must find new materials or new theoretical methods. [0003] In the current information storage technology, Magnetic Random Access Memory (MRAM) uses a magneti...

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Problems solved by technology

[0008] However, in the current research on multiferroic heterojunction structures, there are generally shortcomings such as weak electromagnetic effect and high field strength required for control. Therefore, a new preparation method for heterojunction thin films is developed to obtain strong electromagnetic effect and low response field. wait becomes urgent