CdTe thin film solar battery taking SnTe as back electrode buffer layer, and preparation method of thin film solar battery

A technology of solar cells and buffer layers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low carriers, limiting the increase of battery open circuit voltage, and limiting conversion efficiency.

Active Publication Date: 2018-04-20
ZHEJIANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main problems faced are: 1) CdTe is a P-type semiconductor material with a high work function (about 5.5eV), and it is difficult for general metals to form a low barrier back contact with it; 2) CdTe has a low carrier, usually Around 1014cm-3
These factors greatly limit the improvement of the open circuit voltage of the battery, which in turn limits the further improvement of the conversion efficiency.

Method used

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  • CdTe thin film solar battery taking SnTe as back electrode buffer layer, and preparation method of thin film solar battery
  • CdTe thin film solar battery taking SnTe as back electrode buffer layer, and preparation method of thin film solar battery
  • CdTe thin film solar battery taking SnTe as back electrode buffer layer, and preparation method of thin film solar battery

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Experimental program
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Effect test

Embodiment 1

[0061] Embodiment 1: CdTe thin-film solar cell of single-layer SnTe buffer layer 5

[0062] use figure 1 battery structure.

[0063] Transparent conductive glass layer 1: The conductive glass is purchased directly, and has a fluorine-doped tin oxide conductive layer of about 600nm on it. The conductive glass is cleaned with glass cleaner, absolute ethanol and pure water in sequence, and then blown dry with nitrogen.

[0064] Preparation of high resistance layer 2 and window layer 3: using magnetron sputtering method, in a low vacuum environment, continuously deposit 20nm Zn 2 SnO 4 And 60nm CdS film.

[0065] The preparation of the absorbing layer 4: the close-distance sublimation method is adopted, the temperature of the substrate is controlled at 600° C., the temperature of the CdTe evaporation source is controlled at 650° C., and nitrogen gas is introduced as a protective gas. The thickness of the deposited CdTe film is about 4 microns.

[0066] CdCl for absorber laye...

Embodiment 2

[0070] Embodiment 2: ZnTe: CdTe thin film solar cell of Cu / SnTe buffer layer 5

[0071] use figure 1 battery structure.

[0072] Transparent conductive layer: The conductive glass is purchased directly, with a fluorine-doped tin oxide conductive layer of about 600nm on it. The conductive glass is cleaned with glass cleaner, absolute ethanol and pure water in sequence, and then blown dry with nitrogen.

[0073] Preparation of high resistance layer 2 and window layer 3: using magnetron sputtering method, in a low vacuum environment, continuously deposit 20nm Zn 2 SnO 4 And 60nm CdS film.

[0074] The preparation of the absorbing layer 4: the close-distance sublimation method is adopted, the temperature of the substrate is controlled at 600° C., the temperature of the CdTe evaporation source is controlled at 650° C., and nitrogen gas is introduced as a protective gas. The thickness of the deposited CdTe film is about 4 microns.

[0075] CdCl for absorber layer 4 2 Treatmen...

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Abstract

The invention discloses a CdTe thin film solar battery taking SnTe as a back electrode buffer layer, and a preparation method of the thin film solar battery. According to the CdTe thin film solar battery taking SnTe as the back electrode buffer layer, a battery is arranged in the back electrode position of the CdTe thin film solar battery, and a layer of SnTe buffer layer or a composite buffer layer which is formed by ZnTe:Cu and SnTe is grown between CdTe and a metal back electrode, wherein the SnTe thin film is P+ type. The SnTe thin film has quite high carrier concentration, high hole mobility and extremely low resistivity; and a heterojunction energy band structure formed by the SnTe thin film and CdTe highly facilitates hole transport, thereby lowering potential barrier in the back electrode position of the CdTe thin film solar battery.

Description

technical field [0001] The patent of the present invention relates to a CdTe solar cell based on SnTe as a back electrode buffer layer and a preparation method thereof. Background technique [0002] As human society enters the 21st century, living standards continue to improve, and the demand for energy is also increasing. However, today's mainstream fossil energy reserves are getting smaller and smaller. At the same time, the use of these fossil energy has also caused environmental problems such as "greenhouse effect" and "smog", threatening the sustainable development of human society. Therefore, it is the development direction of today's society to vigorously develop sustainable and pollution-free new energy sources. Among many green energy sources, solar energy has become the most ideal energy source because of its huge reserves, wide distribution and long-term stability. Among them, a solar cell is a device that most directly utilizes solar energy. Using the photovol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0445H01L31/072H01L31/0336H01L31/18
CPCH01L31/0336H01L31/0445H01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 翁泽平吴惠桢沈其苗周洁
Owner ZHEJIANG UNIV
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