Forming method of semiconductor device

Abstract

The invention discloses a forming method of a semiconductor device, and the method comprises the steps: providing a semiconductor substrate which is provided with a fin part and an isolation structure, wherein the isolation structure covers a part of side walls of the fin part; forming a first pseudo-gate structure across the fin part on the isolation structure, wherein the first pseudo-gate structure comprises a first pseudo-gate medium layer and first pseudo-gate electrode layers, the first pseudo-gate medium layer covers a part of the top surface and a part of side wall surfaces of the finpart, and the first pseudo-gate electrode layers are located on the first pseudo-gate medium layer and a part of isolation structure; forming interlayer medium layers on the isolation structure and the fin part, wherein the interlayer medium layers cover a part of side walls of the first pseudo-gate structure; removing the first pseudo-gate electrode layers, and forming an opening; carrying out the doping of modified ions in the isolation structure at the bottom of the opening, and forming a modified layer in the isolation structure, wherein the modified structure is aligned with the surface of the modified layer; and removing the first pseudo-gate medium layer through etching. The method can reduce the loss of the isolation structure, enables the isolation performances of the isolation structure and the modified layer for the fin part to be improved, and meets the demands of the technological design.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistors are one of the most important components in modern integrated circuits. The basic structure of the MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and the gate structure includes: a gate dielectric layer located on the surface of the semiconductor substrate and a gate electrode layer located on the surface of the gate dielectric layer; The source and drain doped regions in the semiconductor substrate on both sides of the pole structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) is an eme...

AI Technical Summary

Problems solved by technology

[0004] However, the electrical performance of semiconductor devices formed by fin field effect transistors in the prior art still needs to be improved

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