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A kind of preparation method of diamond/copper composite material with high thermal conductivity

A composite material and diamond technology, which is applied in the field of diamond/copper composite material preparation, can solve the problems of low bonding strength between diamond and copper matrix, low diamond protection effect, and difficult separation of diamond, so as to ensure the intrinsic thermal conductivity The effect of shortening the sintering cycle and shortening the sintering time

Active Publication Date: 2020-06-12
ZHENGZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of this invention is to provide a kind of preparation method of diamond / copper composite material with high thermal conductivity, which has solved the problem that the bonding strength of diamond and copper substrate in the existing preparation method is not high, the protective effect on diamond is not high, and the tungsten after tungsten plating Diamond separation is difficult, the process is complicated and cumbersome, the preparation cycle is long, and the product performance is unstable

Method used

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  • A kind of preparation method of diamond/copper composite material with high thermal conductivity
  • A kind of preparation method of diamond/copper composite material with high thermal conductivity
  • A kind of preparation method of diamond/copper composite material with high thermal conductivity

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Effect test

Embodiment 1

[0027] The diamond particles and tungsten powder after degreasing and roughening treatment on the surface are mixed evenly according to the mass ratio of 1:4.5-5, and the mixed powder is heated under vacuum conditions, and kept at 1025°C-1035°C for 2-8h, the vacuum degree 10 -2 -10 -4 Pa, the heating rate is 5-6°C / min, and finally the modified tungsten-coated diamond particles are separated;

[0028] After surface modification, tungsten-coated diamond particles with an average particle size of 120 μm-130 μm are mixed evenly with copper powder with an average particle size of 30 μm-46 μm according to the volume content of 50%-60% of the total volume, and the obtained mixed powder is sintered. Sintering parameters: The pressing pressure is 20 MPa-40MPa, the temperature is 900°C-1050°C, the heating rate is 50-100°C / min, the sintering time is 5min-15min, the atmosphere is vacuum, and then the diamond / copper composite material can be obtained by cooling to room temperature with th...

Embodiment 2

[0031] Mix diamond particles with an average particle size of 125 μm and tungsten powder with an average particle size of 0.3 μm at a mass ratio of 1:4.5, place the mixed powder in an alumina porcelain boat, and then place the porcelain boat in a vacuum furnace to heat, 1030 ℃ for 2 hours, with a vacuum of 10 -2 -10 -4 Pa, the heating rate is 5°C / min, and finally the modified tungsten-coated diamond particles are separated by a sample sieve.

[0032] The tungsten-coated diamond particles with an average particle size of 126 μm are mixed with copper powder with an average particle size of 45 μm according to the volume content of 55% of the total volume, and the resulting mixed powder is put into a spark plasma sintering furnace for sintering. Sintering parameters: pressing The pressure is 40MPa, the temperature is 1000°C, the heating rate is 100°C / min, the holding time is 10min, the atmosphere is vacuum, and then the diamond / copper composite material can be obtained by cooling...

Embodiment 3

[0035] Mix diamond particles with an average particle size of 125 μm and tungsten powder with an average particle size of 0.3 μm at a mass ratio of 1:4.5, place the mixed powder in an alumina porcelain boat, and then place the porcelain boat in a vacuum furnace to heat, 1030 ℃ for 2 hours, with a vacuum of 10 -2 -10 -4 Pa, the heating rate is 5°C / min, and finally the modified tungsten-coated diamond particles are separated by a sample sieve.

[0036]The tungsten-coated diamond particles with an average particle size of 126 μm are mixed with copper powder with an average particle size of 45 microns according to the volume content of 60% of the total volume, and the resulting mixed powder is put into a spark plasma sintering furnace for sintering. Sintering parameters: pressing The pressure is 40MPa, the temperature is 1000°C, the heating rate is 100°C / min, the holding time is 10min, the atmosphere is vacuum, and then the diamond / copper composite material can be obtained by coo...

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Abstract

The invention discloses a method for preparing a diamond / copper composite material with high thermal conductivity, which comprises the following steps: (1) The diamond and tungsten powder after degreasing and roughening treatment on the surface are evenly mixed according to the mass ratio of 1:4.5, and the The mixed powder is heated under vacuum conditions, and kept at 1030°C for 2‑8h, where the vacuum degree is 10 ‑2 -10 ‑4 Pa, the heating rate is 5°C / min, and finally the modified tungsten-coated diamond is separated; (2) The tungsten-coated diamond with an average particle size of 125 μm after surface modification is mixed with copper powder with an average particle size of 45 μm according to the volume content of 55% of the total volume Evenly, sinter the obtained mixed powder, sintering parameters: pressing pressure 40MPa, temperature 1000°C, heating rate 100°C / min, sintering time 10min, the atmosphere is vacuum, and then cooled to room temperature, you can get diamond / copper composite Material.

Description

technical field [0001] The invention belongs to the technical field of preparing high thermal conductivity composite materials, in particular to a preparation method of high thermal conductivity diamond / copper composite materials. Background technique [0002] With the development of the electronic industry and high-density packaging technology, the operating temperature of the circuit continues to rise, resulting in the traditional packaging materials can no longer meet its performance requirements. In the field of microelectronics, every 10°C decrease in junction temperature can double the service life of a chip. Therefore, the preparation of electronic packaging materials with high thermal conductivity and low thermal expansion coefficient is the key to the rapid development of the electronics industry. [0003] Common metal materials such as Cu and Al, although their thermal conductivity is as high as 398W / (m·k), their thermal expansion coefficients are too different fr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C26/00C22C1/05C22C1/10B22F1/02B22F3/105
CPCC22C1/05C22C26/00B22F3/105B22F1/17
Inventor 王海龙闫建明张珂皓邵刚许红亮卢红霞范冰冰王溢仁张锐
Owner ZHENGZHOU UNIV
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