Light emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, which belong to the technical field of semiconductors. The epitaxial wafer comprises a substrate, a buffer layer, an un-doped GaN layer, an N-type GaN layer, multiple quantum well layers, an electron barrier layer and a P-type GaN layer, wherein the multiple quantum well layers comprise multiple firstsub layers; each first sub layer comprises a quantum well layer and a quantum barrier layer; the quantum barrier layer which is the closest to the electron barrier layer comprises multiple second sublayers and a third sub layer; each second sub layer comprises a fourth sub layer, a fifth sub layer and a sixth sub layer; each fourth sub layer is an AlGaN layer; each fifth sub layer is a GaN layerwith Mg and In doped at the same time; the In doping position in each fifth sub layer is close to the sixth sub layer; each sixth sub layer is a GaN layer; the third sub layer is a GaN layer with Mg and In doped at the same time; and the Mg and In doping concentrations in the third sub layer are higher than those in each fifth sub layer. Hole injection can be increased, and the light emitting efficiency of the LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. It has the characteristics of high efficiency, environmental protection and green. technology field. The chip is the core component of the LED, including epitaxial wafers and electrodes arranged on the epitaxial wafers. [0003] The existing LED epitaxial wafer includes a substrate and a buffer layer stacked on the substrate in sequence, an N-type gallium nitride layer, a multiple quantum well (English: Multiple Quantum Well, referred to as: MQW) layer, an electron blocking layer and a P-type nitride layer. gallium layer. Wherein, the multi-quantum well layer includes a plurality of sublayers stacked in sequence, and each sublayer inc...

AI Technical Summary

Problems solved by technology

If the gallium nitride quantum barrier layer closest to the electron blocking layer adopts the structure of the above-mentioned improved electron blocking layer, and also includes the first sublayer, the second sublayer and the third sublayer stacked in sequence, then the first sublayer is in While blocking the injection of electrons into the P-type gallium nitride layer, it will also block the injection of holes into the multi-quantum well layer for radiative recombination and light emission with electrons, while the second sublayer and the third sublayer can inject holes into the indium gallium nitrogen quantum well The promotion effect of the InGaN quantum well layer is limited, so the number of holes injected into the InGaN quantum well layer needs to be improved

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