A light-emitting diode epitaxial wafer and its manufacturing method
A technology of light-emitting diodes and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous efficiency of LEDs, and achieve the effect of improving luminous efficiency and increasing the number of carriers
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[0028] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.
[0029] The embodiment of the present invention provides a light emitting diode epitaxial wafer, figure 1 This is a schematic diagram of the structure of a light-emitting diode epitaxial wafer provided by an embodiment of the present invention, see figure 1 The light emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, an active layer 30, a first carrier blocking layer 40, and a P-type semiconductor layer 50. The N-type semiconductor layer 20, the active layer 30, and the first The carrier blocking layer 40 and the P-type semiconductor layer 50 are sequentially stacked on the substrate 10, and the material of the first carrier blocking layer 40 is P-type doped aluminum gallium nitride.
[0030] In this embodim...
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