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Pressure sensor, pressure sensor array and preparation method thereof

A pressure sensor and array technology, applied in the field of pressure sensors, can solve the problems of low sensing sensitivity, unsuitable for pressure sensing arrays, etc., and achieve the effect of improving sensitivity, changing threshold voltage, and small voltage

Active Publication Date: 2018-03-27
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can effectively reduce the working voltage of the prepared OTFT sensing device and facilitate the preparation, the sensed signal cannot be efficiently coupled to the change of the regulation current in the OTFT device, so the obtained sensing sensitivity is generally very low.
Moreover, the horizontal integration of OTFT devices and sensing units is not suitable for realizing high-resolution pressure sensing arrays.

Method used

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  • Pressure sensor, pressure sensor array and preparation method thereof
  • Pressure sensor, pressure sensor array and preparation method thereof
  • Pressure sensor, pressure sensor array and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] The pressure sensing array is completed through the following specific steps:

[0076] (1) Utilize ethanol solution, acetone solution and deionized water to carry out ultrasonic cleaning on the ethylene terephthalate (PET) substrate, dry after cleaning, and use oxygen plasma or ultraviolet light / ozone to treat the substrate surface;

[0077] (2) Prepare row scanning lines and gate electrodes of thin film transistor arrays on the substrate by means of vacuum evaporation;

[0078] (3) Preparing a PVC insulating layer film on the gate electrode by a spin-coating process, and then carrying out ultraviolet cross-linking heating and drying;

[0079] (4) Prepare column scanning data lines, common electrode lines, source electrodes and drain electrodes of the thin film transistor array on the substrate by means of vacuum evaporation;

[0080] (5) A layer of monomolecular layer PFBT is modified on the surface of the source electrode and the drain electrode of the thin film tran...

Embodiment 2

[0086] The pressure sensing array is completed through the following specific steps:

[0087] (1) Utilize ethanol solution, acetone solution and deionized water to ultrasonically clean the polyethylene naphthalate (PEN) substrate, dry after cleaning, and use oxygen plasma or ultraviolet light / ozone to treat the substrate surface;

[0088] (2) Prepare row scanning lines and gate electrodes of thin film transistor arrays on the substrate by means of inkjet printing;

[0089] (3) Prepare a polyvinylpyrrolidone (PVP) insulating layer film containing a crosslinking agent poly(melamine-co-formaldehyde) methanol (methylated polymelamine-co-formaldehyde) on the gate electrode by a spin coating process, and then perform ultraviolet crosslinking heating drying;

[0090] (4) Prepare column scanning data lines, common electrode lines, source electrodes and drain electrodes of the thin film transistor array on the substrate by means of inkjet printing;

[0091] (5) A layer of monomolecul...

Embodiment 3

[0097] The pressure sensing array is completed through the following specific steps:

[0098] (1) Utilize ethanol solution, acetone solution and deionized water to clean the polyimide (PI) substrate, dry it with dry nitrogen after cleaning, and use oxygen plasma or ultraviolet light / ozone to treat the substrate surface;

[0099] (2) Utilize conductive ink based on silver nanoparticles to prepare row scanning lines and gate electrodes of thin film transistor arrays on the substrate by inkjet printing;

[0100] (3) Preparing a polyvinyl alcohol (PVA) insulating layer film containing a cross-linking agent ammonium bichromate on the gate electrode by a spin-coating process, and then performing ultraviolet cross-linking heating and drying;

[0101] (4) Using conductive ink based on silver nanoparticles to prepare column scanning data lines, common electrode lines, source electrodes and drain electrodes of thin film transistor arrays on the substrate by inkjet printing;

[0102] (5...

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Abstract

Disclosed are a pressure sensor, a pressure sensor array and a preparation method thereof. The pressure sensor comprises an organic thin film transistor, the organic thin film transistor comprising asubstrate, a gate electrode at the surface of the substrate, an insulating layer covering the gate electrode and the substrate, a source electrode and a drain electrode on the surface of the insulating layer, and a semiconductor layer covering the source and drain electrodes and the insulating layer; an insulating pressure-sensitive thin film over the semiconductor layer of the organic thin film transistor, a gap being present between the pressure-sensitive thin film and the semiconductor layer; and a top electrode located on the surface of the pressure-sensitive thin film. The above pressuresensor has a higher sensitivity and integration degree.

Description

technical field [0001] The invention relates to the technical field of pressure sensors, in particular to a pressure sensor, a pressure sensor array and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of wearable products, flexible sensor components have become one of the hot topics explored by researchers. Among them, flexible pressure sensors have received extensive attention, and have very broad market prospects in fields including artificial electronic skin, flexible touch screens, intelligent robots, and medical health. [0003] At present, research on flexible pressure sensors can be based on a variety of working principles, mainly including capacitive, resistive, piezoelectric and thin film transistor. Among them, the construction of flexible pressure sensors based on organic thin film transistors (OTFT) has the following advantages: (1) The detected pressure signal changes can be converted and amplified by OTFT...

Claims

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Application Information

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IPC IPC(8): G01L1/14
CPCG01L1/148
Inventor 郭小军陈苏杰唐伟赵家庆
Owner SHANGHAI JIAO TONG UNIV
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