Nitride semiconductor structure and semiconductor light-emitting element

Abstract

The invention relates to a nitride semiconductor structure and a semiconductor light-emitting element. The nitride semiconductor structure is mainly as follows: a light-emitting layer is arranged between an N-type semiconductor layer and a P-type semiconductor layer, wherein a quaternary carrier active layer is arranged between the light-emitting layer and the P-type semiconductor layer; and the quaternary carrier active layer is Al<x>In<y>Ga<1-x-y>N, wherein x and y are numerical values meeting the conditions as follows: x is smaller than 1 and greater than 0, y is smaller than 1 and greaterthan 0 and x+y is smaller than 1 and greater than 0. The semiconductor light-emitting element comprises the nitride semiconductor structure on a substrate, an N-type electrode and a P-type electrode,wherein the N-type electrode is matched with the P-type electrode to provide electric energy. Therefore, compared with a known P-AlGaN electron blocking layer, the nitride semiconductor structure andthe semiconductor light-emitting element have the advantages that the effect of electron holes entering a multi-quantum well structure can be improved, and meanwhile, the target of inhibiting electrons from escaping into the P-type semiconductor layer is achieved, so that the combination probability of the electrons and the electron holes is improved and the light-emitting efficiency is further improved.

Description

[0001] related divisional application [0002] This application is a divisional application of a patent with an application date of January 25, 2013, an application number of 201310028759.6, and an invention title of "Nitride Semiconductor Structure and Semiconductor Light-Emitting Element". technical field [0003] The present invention relates to a nitride semiconductor structure and a semiconductor light-emitting element, in particular to an aluminum indium gallium nitride Al x In y Ga 1-x-y The invention relates to a nitride semiconductor structure of a quaternary carrier active layer of N and a semiconductor light-emitting element, belonging to the technical field of semiconductors. Background technique [0004] In recent years, due to the advancement of epitaxy and process technology, light-emitting diodes have become one of the most promising solid-state lighting sources; among them, light-emitting diodes with gallium nitride (GaN) as the main manufacturing materia...

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Problems solved by technology

[0007] The existing electron blocking layer is formed of a P-type AlGaN layer with a relatively large energy gap, thereby preventing electrons injected from the N-type semiconductor layer from overflowing into the P-type semiconductor layer, so that the electrons can be effectively confined in the quantum well layer , to improve the internal quantum efficiency of light-emitting diodes; however, although the electron blocking layer of P-AlGaN has a relatively large energy gap to prevent electron overflow, it also leads to a relatively poor effect of hole injection into the light-emitting layer; moreover , because the multiple quantum well structure is generally formed by the quantum well layer of InGaN and the quantum barrier layer of GaN, but in essence, the electron blocking layer of P-AlGaN and the quantum barrier layer of GaN have a very high lattice mismatch , so that the InGaN quantum well layer will be seriously affected by compressive stress due to lattice mismatch, and this compressive stress changes the energy band structure of each quantum well layer, so that the electrons and holes in the quantum well layer Spatially separated from each other, resulting in a reduction in the luminous efficiency of the light-emitting diode; moreover, the above-mentioned compressive stress will also deteriorate the interface characteristics between the adjacent GaN quantum barrier layer and the InGaN quantum well layer, thereby losing carriers at the interface, and also Affects the luminous efficiency of light-emitting diodes

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