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Alxga1-xn ternary alloy microcrystalline ball with high al composition and preparation method thereof

A technology of ternary alloys and microcrystalline balls, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of spontaneous phase separation, high cost, unsuitable for commercial development, etc., and achieve the suppression of phase separation , Simple preparation process, good repeatability effect

Active Publication Date: 2019-05-14
SHENYANG LIGONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The reaction source used in the third MBE method is simple, but the MBE method is not suitable for commercial development due to its own characteristics and its high cost
Moreover, both MOCVD and MBE methods showed spontaneous phase separation.
At present, this method has not been used to achieve high Al composition tunable Al x Ga 1-x Report on Microcrystalline Spherule of N Ternary Alloy

Method used

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  • Alxga1-xn ternary alloy microcrystalline ball with high al composition and preparation method thereof
  • Alxga1-xn ternary alloy microcrystalline ball with high al composition and preparation method thereof
  • Alxga1-xn ternary alloy microcrystalline ball with high al composition and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0047] A high Al composition Al x Ga 1-x N ternary alloy crystal balls, Al with x=0.77 x Ga 1-x N semiconductor alloy, the diffraction angles of its XRD pattern characteristic peaks (100), (002) and (101) are between the diffraction angles of wurtzite structure AlN and GaN, indicating that the product is AlGaN crystal with wurtzite structure, see figure 2 .

[0048] For high Al composition Al x Ga 1-x N(x=0.77) microcrystal balls were scanned and analyzed, and the scanning electron micrograph is shown in image 3 , it can be concluded from the figure that Al 0.77 Ga 0.23 Morphology of N ternary alloy crystallite balls, the crystallite balls have a regular and uniform spherical structure with an average diameter of 5.0 μm.

[0049] A high Al composition Al x Ga 1-x The preparation method of N ternary alloy crystal balls comprises the following steps:

[0050] Step 1, pre-deposition thin layer of aluminum powder

[0051] (1) Ultrasonic treatment is carried out to th...

Embodiment 2

[0065] A high Al composition Al x Ga 1-x N ternary alloy crystallite ball, Al x Ga 1-x N semiconductor alloy with wurtzite structure AlGaN crystals. The microcrystalline sphere has a regular and uniform spherical structure with an average diameter of 5.0 μm.

[0066] A high Al composition Al x Ga 1-x The preparation method of N ternary alloy crystal balls comprises the following steps:

[0067] Step 1, pre-deposition thin layer of aluminum powder

[0068] (1) Ultrasonic treatment is carried out to the silicon substrate with ethanol, and after cleaning, the silicon substrate after ultrasonic is obtained;

[0069] Add aluminum powder with a purity of 99.999 and an average particle size of 10 μm into methanol, and perform ultrasonic vibration for 60 minutes. When the aluminum powder is uniformly dispersed, the ultrasonically mixed aluminum powder is obtained;

[0070] (2) Put the ultrasonicated silicon substrate into the ultrasonicated aluminum powder mixture, and air-dry...

Embodiment 3

[0082] A high Al composition Al x Ga 1-x N ternary alloy crystallite ball, Al x Ga 1-x N semiconductor alloy with wurtzite structure AlGaN crystals. The microcrystalline sphere has a regular and uniform spherical structure with an average diameter of 5.0 μm.

[0083] A high Al composition Al x Ga 1-x The preparation method of N ternary alloy crystal balls comprises the following steps:

[0084] Step 1, pre-deposition thin layer of aluminum powder

[0085] (1) Ultrasonic treatment is carried out to the silicon substrate with deionized water, and after cleaning, the silicon substrate after ultrasonic is obtained;

[0086] Add aluminum powder with a purity of 99.999 and an average particle size of 8 μm into methanol, and perform ultrasonic vibration for 40 minutes. When the aluminum powder is uniformly dispersed, the ultrasonically mixed aluminum powder is obtained;

[0087] (2) Put the ultrasonic silicon substrate into the ultrasonic aluminum powder mixture, and let it a...

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Abstract

The invention discloses a high-Al component AlxGa(1-x)N ternary alloy microcrystal sphere and a preparation method thereof and belongs to the technical field of semiconductor alloy material preparation. The microcrystal sphere is an AlxGa(1-x)N ternary alloy crystal of different wurtzite structures of an A1 component, the adjustable range x of the Al component is greater than or equal to 0.77 andless than 1, and the average diameter of the microcrystal sphere is 5.0 [mu]m. The preparation method of the microcrystal sphere comprises the following steps: by taking metal aluminum powder, metal gallium and an ammonia gas as reaction raw materials, vacuuming, introducing argon with the flow of 300-700 sccm, 10-15 minutes later, adjusting the flow of the argon to 40-60sccm, at the same time introducing an ammonia gas of the flow identical to that of the argon, heating to reaction temperature of 950-1000 DEG C within 1-3 hours, and performing vapor deposition method growth, thereby obtainingthe high-Al component AlxGa(1-x)N ternary alloy microcrystal sphere. The method is simple in process, good in repeatability, free of phase separation, low in production cost, free of catalyst or template and easy in industrial popularization and application.

Description

technical field [0001] The invention belongs to the technical field of semiconductor alloy material preparation, in particular to a high Al composition Al x Ga 1-x N ternary alloy microcrystalline ball and its preparation method. Background technique [0002] Group III nitrides AlN and GaN are important wide-bandgap semiconductor optoelectronic materials with high direct bandgap and excellent optoelectronic properties. With the rapid development of GaN-based blue LEDs, research on shorter-wavelength ultraviolet LED light sources has also aroused great enthusiasm among scientific researchers. AlGaN material with high Al composition is the mainstream material for making optoelectronic devices such as ultraviolet detectors, deep ultraviolet light-emitting diodes, and flat panel displays. Low-cost, environmentally friendly and non-toxic, it has greater advantages than traditional gas ultraviolet light sources such as mercury lamps and xenon lamps, and has huge social and econ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/40C30B29/60C30B25/02
CPCC30B25/02C30B29/403C30B29/60
Inventor 沈龙海吕伟
Owner SHENYANG LIGONG UNIV
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