AlCrSiN/VSiN multi-layer nano-coating and preparation method thereof
A nano-multilayer and coating technology, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problems of poor bonding force, large friction coefficient, and decreased hardness.
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[0039] The invention provides a method for preparing an AlCrSiN / VSiN nanometer multilayer coating, comprising the following steps:
[0040] a) Depositing Al on the substrate surface using cathodic arc evaporation 50 Cr 50 N transition layer;
[0041] b) Using a high-power pulsed magnetron power supply to sputter the VSi target, and using a DC arc power supply to evaporate the AlCrSi target at the cathode, in Ar gas and N 2 AlCrSiN / VSiN nanometer multi-layer coatings were reactively deposited in a mixed atmosphere of gas.
[0042] The present invention first uses cathodic arc evaporation to deposit Al on the surface of the substrate 50 Cr 50 N transition layer. In the present invention, there is no special limitation on the type and source of the substrate, and a cemented carbide substrate well known to those skilled in the art can be used. In a preferred embodiment of the present invention, the substrate is a WC-Co cemented carbide substrate.
[0043] In the present inv...
Embodiment 1
[0076] (1) Substrate pretreatment:
[0077] After the substrate is mechanically ground and polished, it is cleaned with a solvent; the specific process of the solvent cleaning is as follows: first use isopropanol to ultrasonically clean for 10 minutes, then use 98% alcohol solution to ultrasonically clean for 10 minutes, and then use an ultrasonic Ultrasonic cleaning with pure water for 3 minutes; followed by ion source bombardment cleaning treatment: use Hall ion source to clean the substrate for 5 minutes to obtain the pretreated substrate; wherein, the ambient pressure of the ion source bombardment cleaning treatment is 2.2×10 -2 Pa, the Ar gas flow rate is 50 sccm, and the substrate bias voltage is -150V.
[0078] (2) Deposit Al on the pretreated substrate surface obtained in step (1) using cathodic arc evaporation 50 Cr 50 N transition layer:
[0079] Heat the working temperature of the deposition chamber to 350°C-400°C, heat the substrate to 400°C-450°C, and extract t...
Embodiment 2
[0083] (1) Substrate pretreatment:
[0084] With embodiment 1.
[0085] (2) Deposit Al on the pretreated substrate surface obtained in step (1) using cathodic arc evaporation 50 Cr 50 N transition layer:
[0086] With embodiment 1.
[0087] (3) Use a high-power pulsed magnetron power supply to sputter the VSi target, use a DC arc power supply to evaporate the AlCrSi target, and use Ar gas and N 2 Reactive deposition of AlCrSiN / VSiN nano-multilayer coating in a mixed atmosphere of gas:
[0088] in Al 50 Cr 50 After the deposition of the N transition layer is completed, maintain the temperature of the chamber at 350°C and the temperature of the substrate at 350°C to 400°C. 2 gas, adjust the flow rate so that Ar gas and N 2 The total gas flow is 80sccm~100sccm, N 2 The gas partial pressure ratio is 40% to 80%; adjust the deposition chamber pressure to 0.5Pa to 2.0Pa, open the VSi magnetron target and the AlCrSi arc target at the same time, the sputtering power of the VSi...
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