Transverse and longitudinal electric field simultaneously optimized wide-bandgap semiconductor transverse superjunction double-diffused transistor
A semiconductor and wide-bandgap technology, applied in the field of lateral superjunction double-diffused transistors, can solve the problems of substrate-assisted depletion, limited effect of lateral electric field optimization, and uneven surface electric field distribution
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[0041] Such as figure 1 , figure 2 and image 3 Shown is a horizontal superjunction double-diffused transistor with horizontal and vertical electric fields and optimized wide bandgap semiconductor:
[0042] Wide bandgap semiconductor material substrate 1, the doping concentration is the concentration of general wide bandgap semiconductor single crystal material, the typical value is 1×10 13 cm -3 ~1×10 15 cm -3 ;
[0043] The base region 2 located on the surface of the wide bandgap semiconductor material substrate;
[0044] Implant N pillars and P pillars on the wide bandgap semiconductor material substrate at the edge of the base region, and arrange them alternately to form super junction (Super Junction) drift regions 5 and 6;
[0045] a source region 3 located on the surface of the base region;
[0046] Drain region 4 located on the surface of super junction drift regions 5 and 6;
[0047] Below the super junction drift region at the drain end are vertical auxilia...
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