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Process for covering surface of aluminum diamond composite material with copper foil and embedding ceramic material

A composite material and surface covering technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of power semiconductor device failure, deformation, movement, etc., and achieve the effect of compact structure, convenient operation, and firm connection

Active Publication Date: 2018-01-19
上海开朋科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the difference in thermal expansion performance, the power semiconductor device will cause permanent movement or deformation of each component material during the process of power loss caused by power loss during the turn-on, turn-on, and turn-off processes, and changes in ambient temperature and humidity, which will eventually cause Failure of Power Semiconductor Devices

Method used

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  • Process for covering surface of aluminum diamond composite material with copper foil and embedding ceramic material
  • Process for covering surface of aluminum diamond composite material with copper foil and embedding ceramic material
  • Process for covering surface of aluminum diamond composite material with copper foil and embedding ceramic material

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Embodiment Construction

[0036] The specific implementation manner of the present invention will be described below in conjunction with the accompanying drawings.

[0037] like Figure 1-Figure 9 As shown, the process of covering the surface of the aluminum-diamond composite material of this embodiment with copper foil while inlaying ceramic materials includes the following steps:

[0038] Step 1: Fix the copper foil 6 to be processed with a thickness of 0.1-0.5mm on the machine tool table 7;

[0039] Step 2: above the copper foil 6, two sets of knife rows are installed, which are respectively the first knife row seat 1, and a plurality of first carving knives 2 are installed in parallel and spaced intervals on the first knife row seat 1, and are also provided with The first knife row seat 1 is parallel to the second knife row seat 3, and a plurality of second carving knives 4 are installed in parallel and spaced intervals on the second knife row seat 3;

[0040] Step 3: The machine table 7 carries ...

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Abstract

The invention relates to a process for covering a surface of an aluminum diamond composite material with a copper foil and embedding a ceramic material. The copper foil covering the surface of aluminum diamond and the ceramic material are etched in advance during the die casting process, the copper foil and the ceramic material wrap an outer side of diamond powder so that firm connection with thediamond composite material is formed very well during the high-pressure die casting and aluminum permeating process, the working reliability of a multi-chip assembly and a large-current power module is improved, and demands such as welding, mechanical processing and coating of a surface of a cooling substrate material are satisfied. The copper foil and the ceramic material which are etched wrap the outer side of the diamond powder, and firm connection among the copper foil, the ceramic material and the aluminum diamond composite material substrate during the die casting process is achieved.

Description

technical field [0001] The invention relates to the technical field of power semiconductor device manufacturing technology, in particular to a process in which the surface of an aluminum-diamond composite material is covered with copper foil and ceramic materials are embedded at the same time. Heat dissipation device for high-power semiconductor modules made of ceramic materials such as aluminum. Background technique [0002] High-power semiconductor devices are the core components of aerospace, national defense construction, civil transportation, power transmission and transformation systems, etc. With the development of power semiconductor devices and the continuous improvement of various technologies, the application voltage range and frequency range continue to expand. Power semiconductor devices will generate certain losses during the working process. When the losses generated by each power semiconductor device chip during the working process are concentrated in a very...

Claims

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Application Information

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IPC IPC(8): H01L21/48
Inventor 傅蔡安傅菂
Owner 上海开朋科技有限公司
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