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igbt chip manufacturing method and igbt chip

A manufacturing method and chip technology, applied in the field of IGBT chip manufacturing and IGBT chip, can solve the problem of easy occurrence of dynamic latch-up, and achieve the effect of improving the anti-latch capability and improving the anti-latch capability.

Active Publication Date: 2021-02-09
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a method for manufacturing an IGBT chip and an IGBT chip to solve the problem in the prior art that the IGBT chip is prone to dynamic latch-up during the over-current shutdown process

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  • igbt chip manufacturing method and igbt chip
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  • igbt chip manufacturing method and igbt chip

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Embodiment Construction

[0033] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0034] In this embodiment, a method for manufacturing an insulated gate bipolar transistor IGBT chip is provided, figure 1 is a flow chart of the method for manufacturing an IGBT chip according to an embodiment of the present invention, such as figure 1 As shown, the process includes the following steps:

[0035] Step S101, depositing a polysilicon layer on...

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Abstract

The invention provides a method for manufacturing an IGBT chip and an IGBT chip, wherein the method for manufacturing an IGBT chip includes: depositing a polysilicon layer on the surface of an N-type doped silicon wafer substrate; The P well layer is formed by implantation and high temperature pushing junction. The present invention forms the P well layer by means of multiple ion implantation and high-temperature pushing junction, so that the P well below the N region has a higher concentration, which is more conducive to improving the anti-latch-up ability, thereby solving the problem of the IGBT chip in the prior art In the process of over-current shutdown, the problem of dynamic latch-up phenomenon is prone to occur, which improves the anti-latch-up ability of the IGBT in the process of over-current shutdown, and at the same time, the back side uses local doping or oxide layer isolation to reduce the active area. The current concentration at the edge improves the over-current shutdown capability of the IGBT.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to an IGBT chip manufacturing method and the IGBT chip. Background technique [0002] Due to the advantages of low switching loss, simple gate control, and excellent switch controllability, the insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, referred to as IGBT) is widely used in industrial frequency conversion, high-power locomotive traction, and power grids. Since its invention in the 1980s, the vertical structure of IGBT has undergone development from punch-through type, non-punch-through type to soft punch-through type, and the power density that can be handled by a chip per unit area is increasing. Especially for IGBT chips using transparent collector technology, since there is no need to use carrier lifetime control technology, the on-state voltage drop has a positive temperature coefficient, which is easy to realize the parallel use o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331H01L29/06H01L29/739
Inventor 王耀华温家良金锐赵哿刘江高明超崔磊李立朱涛
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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