A high-current silicon-on-insulator lateral insulated gate bipolar transistor device

Abstract

The invention relates to a high-current silicon-on-insulator transverse insulated gate bipolar transistor device. The device comprises a P-type substrate; a buried oxide is arranged on the P-type substrate; an N-type epitaxial layer is arranged on the buried oxide, wherein the N-type epitaxial layer is divided into a first N-type epitaxial layer, a second N-type epitaxial layer and a third N-type epitaxial layer trough isolation oxide layers; a second P-type body region and an N type buffer layer are arranged at the upper part of the third N-type epitaxial layer; an N-type emitter and an interdigitated second heavily doped P region are arranged in the second P-type body region; a gate oxide layer and a polysilicon gate are arranged on the second P-type body region; a P-type collector is arranged in the N type buffer layer and is adopted as the anode of the device; an anode metal layer is arranged on the P-type collector; at least two first P-type body regions are arranged at the upper part of the second N-type epitaxial layer; N-type MOS transistors are arranged in the at least two first P-type body regions respectively; at least two series diodes are arranged at the upper part of the first N-type epitaxial layer; isolation oxide layers are arranged between adjacent diodes; the N-type emitter is connected with all N-type drains; the second heavily doped P region is connected with the anodes of the series diodes; N-type sources and first heavily doped P regions are connected with the cathode of the tail end diode of the series diodes; and the cathode of the tail end diode of the series diodes is adopted as the cathode of the device.

Description

technical field [0001] The invention mainly relates to the technical field of power semiconductor devices, in particular to a large-current silicon-on-insulator lateral insulated gate bipolar transistor device, which is especially suitable for single-chip integrated power chips and intelligent power modules. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a composite power device evolved from the combination of MOS gate device structure and bipolar transistor structure. It has the characteristics of both MOS transistor and bipolar transistor, and has good on-state current and The trade-off relationship between switching losses. Silicon-on-insulator lateral insulated gate bipolar transistor (SOI-Lateral InsulatedGate Bipolar Transistor, SOI-LIGBT) is a typical device based on SOI technology, which has the advantages of easy integration, high withstand voltage, strong drive current capability, and fast switching speed. It has been widely used in powe...

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Problems solved by technology

However, the small current capability of SOI-LIGBT devices is the bottleneck that restricts the power module to work at a higher frequency, with better energy efficiency and smaller chip area.

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