Direct band gap modified Ge material based on GeSiC selective epitaxy and preparation method for the same

A selective epitaxy and direct technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high strength, difficult to achieve 2.4GPa biaxial stress, and difficult process realization, so as to achieve high working speed and enhanced spontaneous radiation efficiency , good frequency characteristics

Active Publication Date: 2018-01-05
XIDIAN UNIV
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Problems solved by technology

[0006] However, the required strength is too high when the stress is simply applied. It is difficult to achieve a biaxial stress of 2.4GPa in the current common epitaxial technology process, and the process is difficult to realize.
For example, Ge is epitaxial on the Si substrate first, and the different thermal expansion coefficients of Si and Ge are used in the annealing process to obtain a tensile strain of 0.3% for the Ge epitaxial layer, but it is still impossible to transform Ge into a direct bandgap semiconductor material. Only quasi-direct bandgap Ge can be achieved with heavy doping

Method used

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  • Direct band gap modified Ge material based on GeSiC selective epitaxy and preparation method for the same
  • Direct band gap modified Ge material based on GeSiC selective epitaxy and preparation method for the same
  • Direct band gap modified Ge material based on GeSiC selective epitaxy and preparation method for the same

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Embodiment 1

[0053] See figure 2 , figure 2 It is a process flow chart of a direct band gap modification of Ge material based on GeSiC selective epitaxy provided by an embodiment of the present invention. The method includes the following steps:

[0054] Step a, select Si substrate;

[0055] Step b, at a first temperature, growing a first Ge layer on the surface of the Si substrate;

[0056] Step c, at a second temperature, growing a second Ge layer on the surface of the first Ge layer;

[0057] Step d, using an etching process to etch the second Ge layer to form a plurality of Ge steps located in the middle position;

[0058] Step e, depositing Si on the surface of the second Ge layer 3 N 4 Material, selectively etch the Si 3 N 4 Material, Si that retains multiple Ge steps 3 N 4 Material forms Si 3 N 4 Barrier layer

[0059] Step f, using chemical vapor deposition to grow Ge on the surface of the second Ge layer 0.73 Si 0.24 C 0.03 alloy;

[0060] Step g, remove the Si 3 N 4 Barrier layer to form ...

Embodiment 2

[0077] See Figure 5a-Figure 5i , Figure 5a-Figure 5i This is a process schematic diagram of a direct bandgap modification of Ge material based on GeSiC selective epitaxy provided by an embodiment of the present invention. On the basis of the foregoing embodiment, this embodiment will introduce the process flow of the present invention in more detail. The method includes:

[0078] S101. The substrate is selected. Such as Figure 5a As shown, the Si (001) substrate sheet 201 is selected as the original material;

[0079] S102, epitaxial layer growth:

[0080] S1021. Using the CVD method, grow an n-type Ge(001) film on the substrate with a low and high temperature two-part method, with a doping concentration of 1×10 16 ~5×10 16 cm -3 .

[0081] S1022, such as Figure 5b As shown, a 40nm thick "low temperature" Ge (LT-Ge) layer 202 is grown at 275-325°C. Most of the relaxation of the elastic stress occurs in the low-temperature Ge layer less than 10 nanometers, but in order to avoid t...

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Abstract

The invention discloses a direct band gap modified Ge material based on GeSiC selective epitaxy and a preparation method for the same. The direct band gap modified Ge material based on GeSiC selectiveepitaxy comprises steps of choosing an Si substrate, growing a first Ge layer, growing a second Ge layer, using etching technology to etch the second Ge layer to form multiple Ge steps arranged in amiddle position, depositing an Si3N4 material on the surface of the second Ge layer, selectively etching the Si3N4 material to reserve the Si3N4 material of the multiple Ge steps to form an Si3N4 blocking layer, using a chemical vapor deposition (CVD) method to grow a Ge0.37Si0.24C0.03alloy material on the surface of the second Ge layer, and removing the Si3N4 blocking layer in order to form a direct band gap modified Ge material. The invention provides a Ge1-x-y-SixCy selective epitaxy induced Ge direct band gap semiconductor realization method. Because a crystal lattice constant of the Ge isgreater than a Ge1-x-ySixCy crystal lattice constant, the epitaxy is selectively performed on the Ge1-x-ySixCy on circumference of the etched Ge using a lattice mismatch stress inducing theory and double-axis tension stress is introduced to the Ge semiconductor in a center area.

Description

Technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a direct band gap modified Ge material based on GeSiC selective epitaxy and a preparation method thereof. Background technique [0002] Optoelectronic integration is the integration of optical components and electronic devices (integrated circuits) in order to achieve the transmission and processing of information at the same time. In terms of integration form, optoelectronic integration can be divided into hybrid integration and monolithic integration. Among them, the monolithic integration method with low cost, high output, stable and reliable device performance has attracted much attention, and the highly mature silicon-based semiconductor processing technology and integrated circuit system provide convenient conditions for the development of silicon-based monolithic optoelectronic integration. [0003] Silicon materials have the characteristics of indirect bandgap semic...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/34
Inventor 曹世杰宋建军苗渊浩宣荣喜胡辉勇张鹤鸣
Owner XIDIAN UNIV
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