Anodic oxidation process for high-silicon high-copper die-cast aluminum and high-silicon high-copper die-cast aluminum alloy
An anodizing, high-copper technology, applied in anodizing, electrolytic coating, surface reaction electrolytic coating, etc., can solve the problems of high hardness, easy "burning, large thickness of oxide film and so on"
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Embodiment 1
[0026] The invention provides an anodic oxidation process of high-silicon and high-copper die-casting aluminum, wherein the electrolytic solution for anodic oxidation includes 100g / L of sulfuric acid and 15g / L of additives, and the additives include glycerin, organic acids, sulfates and fluorides ;
[0027] The temperature of the electrolyte is 15°C;
[0028] The power supply voltage of the anodic oxidation is a high-frequency pulse power supply, the voltage is 60V, the frequency is 2000Hz, the duty cycle is 50%, and the current density is 2A / dm 2 , the oxidation time is 60 minutes;
[0029] The organic acid is selected from citric acid, the sulfate is selected from nickel sulfate, and the fluoride is selected from calcium fluoride.
[0030] According to the above-mentioned anodizing process, for high-silicon and high-copper die-casting aluminum ADC10 (copper content 2.0-4.0, silicon content 7.5-9.5), ADC10 high-silicon and high-copper die-casting aluminum film layer is 50um...
Embodiment 2
[0032] The invention provides an anodic oxidation process of high-silicon and high-copper die-casting aluminum, wherein the electrolytic solution for anodic oxidation includes 400g / L of sulfuric acid and 10g / L of additives, and the additives include glycerin, organic acids, sulfates and fluorides ;
[0033] The temperature of the electrolyte is 5°C;
[0034] The power supply voltage of the anodizing is a variable voltage DC power supply, the voltage is 120V, the frequency is 5-500Hz, the duty cycle is 1-50%, and the current density is 1A / dm 2 , the oxidation time is 90 minutes;
[0035] The organic acid is selected from tartaric acid, the sulfate is selected from barium sulfate, and the fluoride is selected from aluminum fluoride.
[0036] According to the above-mentioned anodizing process, for high-silicon and high-copper die-casting aluminum ADC10 (copper content 2.0-4.0, silicon content 7.5-9.5), ADC10 high-silicon and high-copper die-casting aluminum film layer is 30-40u...
Embodiment 3
[0038] The invention provides an anodic oxidation process of high-silicon and high-copper die-casting aluminum, the electrolyte of the anodic oxidation includes 160g / L of sulfuric acid and 15g / L of additives, and the additives include glycerin, organic acids, sulfates and fluorides ;
[0039] The temperature of the electrolyte is 25°C;
[0040] The power supply voltage of the anodization is DC superimposed pulse power supply, the voltage is 120V, the frequency is 50-200Hz, the duty cycle is 40-70%, and the current density is 3A / dm 2 , the oxidation time is 80 minutes;
[0041] The organic acid is malic acid, the sulfate is manganese sulfate, and the fluoride is calcium fluoride.
[0042] According to the above-mentioned anodizing process, for high-silicon and high-copper die-casting aluminum ADC12 (copper content 1.5-3.5, silicon content 9.6-12), ADC12 high-silicon and high-copper die-casting aluminum film layer is 30-50um, and the hardness is 400-450Hv.
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