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Method for preparing cube silicon carbide coating

A cubic silicon carbide and coating technology, applied in coating, metal material coating process, gaseous chemical plating and other directions, can solve the problem of shortening the service life of graphite materials, and achieve widening the applicable field, preventing etching, and improving the use of effect of life

Active Publication Date: 2017-12-26
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the temperature in the reaction furnace rises above 1000°C, H 2 , O 2 , NH 3 The atmosphere will quickly react with graphite to etch the graphite material and shorten the service life of the graphite material

Method used

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  • Method for preparing cube silicon carbide coating
  • Method for preparing cube silicon carbide coating
  • Method for preparing cube silicon carbide coating

Examples

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Comparison scheme
Effect test

Embodiment 1

[0029] A method for preparing a cubic silicon carbide coating, comprising the steps of

[0030] 1) Put the graphite substrate on the substrate base in the reaction chamber of the cold-wall laser chemical vapor deposition device, and vacuumize to reduce the pressure in the device to 1-10Pa;

[0031] 2) Pass in diluent gas H 2 , H 2 The flow rate is 2500sccm;

[0032] 3) Turn on the laser to irradiate the surface of the graphite substrate, the laser wavelength is 1050nm; adjust the laser power to raise the temperature of the graphite substrate to 1320°C and keep it warm;

[0033] 4) Open the carrier gas containing HMDS, the flow rate of HMDS is 3 sccm;

[0034] 5) Adjust the pressure in the reaction chamber to 3000Pa, and keep it for 20 minutes for deposition reaction;

[0035] 6) Turn off the laser, the carrier gas containing HMDS and the diluent gas, evacuate to below 10Pa, and cool naturally to room temperature, that is, a cubic silicon carbide coating is deposited on the...

Embodiment 2

[0038] A method for preparing a cubic silicon carbide coating, comprising the steps of

[0039] 1) Put the graphite substrate on the substrate base in the reaction chamber of the cold-wall laser chemical vapor deposition device, and vacuumize to reduce the pressure in the device to 1-10Pa;

[0040] 2) Pass in diluent gas H 2 , H 2 The flow rate is 2000sccm;

[0041] 3) Turn on the laser to irradiate the surface of the graphite substrate, the laser wavelength is 1050nm; adjust the laser power to raise the temperature of the graphite substrate to 1250°C and keep it warm;

[0042] 4) Open the carrier gas containing HMDS, the flow rate of HMDS is 5 sccm;

[0043] 5) Adjust the pressure in the reaction chamber to 4500Pa, and keep it for 10 minutes for deposition reaction;

[0044] 6) Turn off the laser, the carrier gas containing HMDS and the diluent gas, evacuate to below 10Pa, and cool naturally to room temperature, that is, a cubic silicon carbide coating is deposited on the...

Embodiment 3

[0047] A method for preparing a cubic silicon carbide coating, comprising the steps of

[0048] 1) Put the graphite substrate on the substrate base in the reaction chamber of the cold-wall laser chemical vapor deposition device, and vacuumize to reduce the pressure in the device to 1-10Pa;

[0049] 2) Pass in diluent gas H 2 , H 2 The flow rate is 3000sccm;

[0050] 3) Turn on the laser to irradiate the surface of the graphite substrate, the laser wavelength is 1050nm; adjust the laser power to raise the temperature of the graphite substrate to 1450°C and keep it warm;

[0051] 4) Open the carrier gas containing HMDS, the flow rate of HMDS is 1 sccm;

[0052] 5) Adjust the pressure in the reaction chamber to 2500Pa, and keep it for 30 minutes for deposition reaction;

[0053] 6) Turn off the laser, the carrier gas containing HMDS and the diluent gas, evacuate to below 10Pa, and cool naturally to room temperature, that is, a cubic silicon carbide coating is deposited on the...

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Abstract

The invention discloses a method for preparing a cube silicon carbide coating. The method includes the following steps that (1) a graphite substrate is put into a substrate base of a cold-wall-type laser chemical vapor deposition device, vacuum pumping is conducted, and the intensity of pressure is dropped to 10Pa or below; (2) H2 is connected in to serve as diluent gas; (3) lasers are started to irradiate the surface of the graphite substrate, and the temperature of graphite can be raised quickly by adjusting the laser power; (4) current-carrying gas containing precursor HMDS is connected in, the vacuum degree of a reaction chamber is adjusted to 2500-4500Pa, and the process is kept for 10-30min; and (5) the lasers, the HMDS and the diluent gas are shut down, vacuum pumping is performed and natural cooling is conducted to an indoor temperature. According to the method, the thin film obtained through deposition refers to a cube silicon carbide (beta-SiC) thin film; and under the different deposition conditions, the beta-SiC thin films of different microstructures can be formed, the surface wettability of graphite materials can be controlled and adjusted, and the method is suitable for being applied and popularized.

Description

technical field [0001] The invention belongs to the field of inorganic material structure control, and in particular relates to a preparation method of a cubic silicon carbide coating. Background technique [0002] Graphite (melting point: 3850°C) has high temperature resistance, low coefficient of thermal expansion, and high strength, and is widely used as supports or reaction crucibles in high-temperature reaction furnaces in the semiconductor industry. However, in actual production, it is often necessary to contain H in the high temperature reaction furnace 2 , O 2 , NH 3 Operate under atmosphere. But when the temperature in the reaction furnace rises above 1000°C, H 2 , O 2 , NH 3 Such atmospheres will quickly react with graphite to etch the graphite material and shorten the service life of the graphite material. On the other hand, graphite is a material with relatively high porosity, with a porosity of about 10-23%. After the high-temperature metal melt contacts ...

Claims

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Application Information

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IPC IPC(8): C23C16/32C23C16/48
CPCC23C16/325C23C16/483
Inventor 涂溶徐青芳章嵩张联盟
Owner WUHAN UNIV OF TECH
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