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Method for passivating black phosphorus nanometer materials

A technology of nanomaterials and black phosphorus, applied in chemical instruments and methods, nanotechnology, nanotechnology, etc., can solve problems such as high cost, complicated method process, poor passivation effect, etc., and achieve the effect of improving stability

Active Publication Date: 2017-12-01
SHENZHEN UNIV
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Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a method for passivating black phosphorus nanomaterials, aiming to solve the problems of complex process, poor passivation effect and high cost of the existing method for passivating black phosphorus. question

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  • Method for passivating black phosphorus nanometer materials
  • Method for passivating black phosphorus nanometer materials
  • Method for passivating black phosphorus nanometer materials

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Embodiment 1

[0047] In the present embodiment, the purity specifications of the raw materials used are respectively: Zn(CH 3 COO) 2 (99.9+%), KOH particles (85%), deionized water (R=16.2MΩ), chloroform (chromatographically pure), N-methylpyrrolidone (99.9%).

[0048] (1) Grind 5 mg of black phosphorus blocks and disperse them in 20 ml of N-methylpyrrolidone solution, and ultrasonicate for 6 hours to obtain a mixed solution of black phosphorus with different layers;

[0049] (2) The obtained mixed solution is mixed with a certain gradient, 70×g, 278×g, 1112×g, 2503×g, 6953×g, 13628×g and 17800×g (g=9.80m / s 2 ) centrifugal force to carry out stepwise centrifugation to obtain black phosphorus quantum dot colloidal solution;

[0050] (3) 47.58mg Zn(CH 3 COO) 2 Dissolve in 10ml of black phosphorus quantum dot colloidal solution, feed nitrogen into the solution, make the whole reaction in a nitrogen atmosphere, and reflux in a water bath at 60°C for 60 minutes simultaneously to obtain Zn(CH ...

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Abstract

The invention discloses a method for passivating black phosphorus nanometer materials. The proportions of Zn(CH3COO)2 and KOH to black phosphorus quantum dots are adjusted, so that the morphology of ZnO nanometer crystal and black phosphorus nanometer material composite materials can be controlled; conduction bands of black phosphorus are positioned below conduction bands of ZnO, accordingly, electrons of the ZnO can be naturally transferred into the black phosphorus by energy band structures, oxidation of the black phosphorus can be relieved by excessive electrons in the black phosphorus, and accordingly effects of passivating the surface of the black phosphorus can be realized. The method for passivating the black phosphorus nanometer materials has the advantages that the method is simple and is easy to implement and low in cost, and the stability of the black phosphorus nanometer materials can be greatly improved by the prepared ZnO nanometer crystal and black phosphorus nanometer material composite structures.

Description

technical field [0001] The invention relates to the field of black phosphorus nanomaterials, in particular to a method for passivating black phosphorus nanomaterials. Background technique [0002] As an important van der Waals two-dimensional material, black phosphorus has a direct energy band structure, and the band gap can be adjusted from 0.3eV to 2eV with the layer thickness. Black phosphorus material has a carrier mobility as high as 1000 cm at room temperature 2 V -1 the s -1 , has certain advantages in the application of (opto) electronic devices, and can be used to make sensors, field effect transistors, photodetectors, capacitors, etc. With its unique in-plane anisotropic structure, black phosphorus also exhibits unique angle-dependent properties, such as angle-dependent electrical conduction and polarized optical properties, opening up a new path for the application of black phosphorus. However, black phosphorus exposed to the environment will form bubbles on t...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B25/00B82Y30/00
CPCB82Y30/00C01B25/006C01P2002/82C01P2004/62
Inventor 曾昱嘉袁君胡亮
Owner SHENZHEN UNIV
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