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Preparation methods of benzocyclobutene functionalized cage type polysilsesquioxane (POSS) and resins of benzocyclobutene functionalized cage type polysilsesquioxane

A benzocyclobutene functional, polysilsesquioxane technology, applied in the direction of coating, can solve problems such as limiting the application of materials, and achieve the effects of low dielectric properties, excellent heat resistance, and high thermal stability

Inactive Publication Date: 2017-11-07
SOUTHWEAT UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In the prior art, there are many reports on benzocyclobutene resins abroad, such as: U.S.Pat.5882836, 1999; Journal of Polymer Science, Part A: Polymer Chemistry, 2011, 49, 381-391; Chinese patent CNL200710111698. 4 etc. U.S. Patent (U.S.Pat.5882836, 1999) utilizes 4-bromobenzocyclobutene and tetramethyldivinyldisiloxane to bridge the tetramethyldivinylsiloxane prepared by HECK reaction The benzocyclobutene (DVSBCB) monomer can be polymerized to obtain a silicone resin with better comprehensive properties. Although it shows better electrical and thermal properties, this type of resin cannot meet the T requirements at the same time. 0 >450℃, dielectric constant k<2.20; the dielectric constant of existing foreign commercialized DVSBCB resin is 2.65, which limits the application of materials in the microelectronics industry

Method used

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  • Preparation methods of benzocyclobutene functionalized cage type polysilsesquioxane (POSS) and resins of benzocyclobutene functionalized cage type polysilsesquioxane
  • Preparation methods of benzocyclobutene functionalized cage type polysilsesquioxane (POSS) and resins of benzocyclobutene functionalized cage type polysilsesquioxane
  • Preparation methods of benzocyclobutene functionalized cage type polysilsesquioxane (POSS) and resins of benzocyclobutene functionalized cage type polysilsesquioxane

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Experimental program
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Embodiment 1

[0051] Benzocyclobutene functionalized cage polysilsesquioxane is characterized in that the compound has the chemical structural formula shown in (IV):

[0052]

[0053] In the formula:

[0054]

[0055] 01 1 =8.

Embodiment 2

[0057] The preparation method of cage type [1,1-dimethyl, 1-(4'-benzocyclobutenyl) silicon ethyl] vinyl silsesquioxane (BCB-POSS for short), the steps are: drying In an anaerobic bottle equipped with a magnetic stirrer, add 6.33 g of cage-type octavinylsilsesquioxane (OVPOSS for short), pass nitrogen gas for 10 minutes to remove the oxygen in the system, and then add [4-(1,1- Dimethyl-1-hydrogen)] silylbenzocyclobutene (abbreviated as 4-DMHSBCB) 16.2g, molar concentration is 0.025M (catalyst) H 2 PtCl 6 100 μL of tetrahydrofuran solution and 50 mL of toluene, the mixture was reacted at 80° C. for 72 hours under a nitrogen atmosphere, and the reaction raw material OVPOSS was monitored by thin-layer chromatography to see if the reaction was complete. After the reaction is over, cool the reacted material to room temperature, add ethanol with 5 times the mass of the reacted material, precipitate, and filter; add ethanol with 5 times the mass of the reacted material to the solid o...

Embodiment 3

[0060] The preparation method of cage type [1,1-dimethyl, 1-(4'-benzocyclobutenyl) silicon ethyl] vinyl silsesquioxane (BCB-POSS for short), the steps are: drying In an anaerobic bottle equipped with a magnetic stirrer, add 6.33 g of cage-type octavinylsilsesquioxane (OVPOSS for short), pass nitrogen gas for 30 minutes to remove the oxygen in the system, and then add [4-(1,1- Dimethyl-1-hydrogen)] silylbenzocyclobutene (abbreviated as 4-DMHSBCB) 24.3g, molar concentration is 0.025M (catalyst) H 2 PtCl 6 200 μL of tetrahydrofuran solution and 60 mL of toluene, the mixture was reacted at 85° C. for 60 hours under a nitrogen atmosphere, and the reaction raw material OVPOSS was monitored by thin-layer chromatography to see if the reaction was complete. After the reaction, cool the reacted material to room temperature, add ethanol with 10 times the mass of the reacted material, precipitate, and filter; add ethanol with 10 times the mass of the reacted material to the solid obtaine...

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Abstract

The invention discloses preparation methods of benzocyclobutene functionalized cage type polysilsesquioxane (POSS), shown in a formula (IV), and resins of the benzocyclobutene functionalized cage type POSS. The preparation method of the benzocyclobutene functionalized cage type POSS comprises the steps of adding a toluene solution of OVPOSS and 4-(1,1-dimethyl-1-hydrogen)silicon-base benzocyclobutene into a reactor, replenishing the reactor with nitrogen for protecting, adding a tetrahydrofuran solution of chloroplatinic acid, carrying out a reaction at the temperature of 60-90 DEG C, separating and purifying the materials obtained after the reaction is finished so as to obtain the benzocyclobutene functionalized cage type POSS. The benzocyclobutene functionalized cage type POSS can be further prepared into body polymers or solution polymers, and can be added into matrix resins so as to form nano composite materials. According to the preparation methods, the POSS is cleverly introduced into the benzocyclobutene resin by means of a simple and efficient hydrosilylation reaction. The resins prepared by the methods provided by the invention have excellent heat stability, mechanical properties and electrical properties, thus being suitable for being used as interlayer dielectric films or packaging materials in the fields such as micro-electronics industry and national defense aerospace. The formula (IV) is described in the description.

Description

technical field [0001] The invention belongs to macromolecular compounds and their preparation, and relates to a preparation method of benzocyclobutene-functionalized cage polysilsesquioxane (BCB-POSS for short) and its resin. The resin prepared by the invention has excellent thermal stability, mechanical properties and electrical properties, and is suitable for use as an interlayer dielectric film or packaging material in the fields of microelectronics industry, national defense, aerospace and the like. Background technique [0002] With the rapid development of the microelectronics industry, the research and development of high-performance low-dielectric constant materials have been highly valued. As the size of VLSI gradually shrinks and the link lines inside the chip become denser, the transmission delay and cross-interference of signals are caused. In order to solve these problems, materials are required to meet comprehensive properties such as low dielectric, low loss...

Claims

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Application Information

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IPC IPC(8): C08G77/38C08F299/08C09D155/00
CPCC08F299/08C08G77/045C09D155/005
Inventor 杨军校胡欢韦雪莲范立李贤黄亚文
Owner SOUTHWEAT UNIV OF SCI & TECH
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