Preparation method of flexible OLED light-emitting device based on anode structure of novel laminated film

Abstract

The invention relates to a preparation method of a flexible OLED light-emitting device based on the anode structure of a novel laminated film. The OLED light-emitting device comprises a light-emitting layer and a cathode positioned on one side of the light-emitting layer. The method comprises the following steps: S1, growing graphene on a copper foil by adopting a chemical vapor deposition method; S2, transferring the graphene onto a flexible PET substrate; S3, putting the prepared graphene / PET into an HNO3 solution for soaking, and then drying; S4, spraying a PEDOT:PSS solution on the treated graphene, then putting on a heating plate for drying; and S5, putting a prepared graphene / PEDOT:PSS composite film into a vacuum cavity, adopting a vacuum evaporation technology to heat and plate the graphene / PEDOT:PSS composite film on the side, at the back of the cathode, of the light-emitting layer as an anode, and thus preparing the OLED light-emitting device. The graphene serves as the anode of a photoelectric device, so that the anode has the characteristics of high carrier mobility, good mechanical flexibility, high transmittance and the like; and the PEDOT:PSS enables the anode to be of the characteristics of high conductivity, high work function and high transmittance.

Description

technical field [0001] The invention relates to a flexible OLED light-emitting device, more specifically, to a method for preparing a flexible OLED light-emitting device based on a novel laminated film anode structure. Background technique [0002] Flexible organic light-emitting diodes (FOLEDs) have attracted extensive attention due to their many advantages such as low cost, high color purity, light weight, and high luminous efficiency. [0003] Indium tin oxide (ITO) is a mixture of indium (III group) oxide (In2O3) and tin (IV group) oxide (SnO2), usually with a mass ratio of 90% In2O3 and 10% SnO2. It is transparent and slightly brown in film form. In the block state, it is yellowish-gray. Indium tin oxide thin films are most commonly deposited onto surfaces by physical vapor deposition, or some sputter deposition technique. [0004] The main property of ITO is its combination of electrical conductivity and optical transparency, however, a compromise needs to be made i...

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Problems solved by technology

[0004] The main property of ITO is its combination of electrical conductivity and optical transparency, however, a compromise needs to be made in thin film deposition, as a high concentration of charge carriers will increase the conductivity of the material but reduce its transparency

[0005] Traditional OLEDs use indium tin oxide anode, because of the high price and limited supply of indium, the fragility and lack of flexibility of the ITO layer, and the vacuum required for expensive layer deposition, making ITO difficult to prepare flexible devices, other substitutes are being tried Look for

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