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Graphene-based high-voltage pulse thin-film capacitor

A graphene film and film capacitor technology, applied in the direction of film/thick film capacitors, laminated capacitors, fixed capacitor electrodes, etc., can solve the problems of reduced capacitor performance and reliability, poor electrode heating, heat dissipation and cooling effect, etc. Achieve the effect of reducing temperature, stabilizing energy storage, improving compressive strength and working reliability

Inactive Publication Date: 2017-10-20
NANJING UNIV OF SCI & TECH
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  • Summary
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a graphene-based high-voltage pulse film capacitor to solve the problem of lower capacitor performance and reliability caused by the existing high-voltage pulse film capacitor electrode heating, heat dissipation and poor cooling effect. question

Method used

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Embodiment Construction

[0023] The specific implementation manners of the present invention will be described below in conjunction with the accompanying drawings.

[0024] Such as Figure 1-4 A graphene-based high-voltage pulse film capacitor provided by the present invention is composed of a plurality of dielectric layers 4 and a plurality of graphene electrode layers alternately laminated, and the plurality of dielectric layers 4 and a plurality of graphene electrode layers are alternately stacked The stacked layers are wound to obtain a wound capacitor or a plurality of dielectric layers 4 and graphene electrode layers are alternately stacked to form a stacked or flat-plate capacitor. Described dielectric layer 4 is a resin film, and its material can be polypropylene or polyethylene; Described graphene electrode layer is made up of connected metallized film 3 and graphene film 2, and described dielectric layer 4 and graphene The metallized film 3 of the electrode layer is connected, or the dielec...

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Abstract

The invention discloses a graphene-based high-voltage pulse thin-film capacitor. The capacitor is composed of more than one dielectric layer and more than one graphene electrode layer in an alternative laminating manner. The graphene electrode layer is composed of a metalized film and a graphene film which are connected with each other. According to the graphene-based high-voltage pulse thin-film capacitor, the graphene film is added on the surface of the capacitor electrode. An excellent surface heat conduction performance of the graphene film can be utilized for quickly transferring heat of electrodes between the capacitor layers out of the electrodes of the capacitor, thereby remarkably reducing heat accumulation of the electrodes in the capacitor, realizing temperature control and heat management to the electrodes in the capacitor, reducing electric field strength loss of the capacitor caused by temperature increase, stabilizing stored energy of the pulse capacitor, and realizing small size and high capacity of the capacitor.

Description

technical field [0001] The present invention relates to the field of pulse power technology, in particular to a graphene-based high-voltage pulse film capacitor, and in particular to the improvement of the thermal performance of wound and laminated pulse film capacitors. Background technique [0002] High voltage pulse capacitors generally refer to metallized organic film capacitors or ceramic capacitors, which are widely used in electromagnetic emission, laser power supply, energy storage welding, high voltage technology and other fields. Generally speaking, there are two main structures of high-voltage pulse capacitors. One is to wind or laminate a composite medium composed of aluminum foil as an electrode and plastic film or insulating material and film to form a capacitor; the other is a full-film metallization structure. A very thin metal layer is deposited on a plastic film or an insulating material in a vacuum state to form an electrode, and then wound or laminated to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/33H01G4/008H01G4/14
CPCH01G4/33H01G4/008H01G4/14
Inventor 董健年余延顺张军崔艳丽臧敏
Owner NANJING UNIV OF SCI & TECH
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