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A kind of Wsialn thin film for piezoelectric thin film transducer and preparation method thereof

A piezoelectric thin film, transducer technology, applied to the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, materials for piezoelectric devices or electrostrictive devices Choosing the same direction can solve the problems of large stress, poor c-axis orientation, and difficult control of W film stress, and achieve the effects of reducing stress, improving c-axis orientation, and reducing stress

Active Publication Date: 2019-07-09
CHINA ELECTRONICS TECH GRP NO 26 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides a WSiAlN thin film for a piezoelectric thin film transducer and a preparation method thereof to solve the problem that tungsten W is used as the bottom electrode at present, the stress of the W thin film is not easy to control, and the piezoelectric thin film grown on it has poor c-axis orientation. stressful problems

Method used

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  • A kind of Wsialn thin film for piezoelectric thin film transducer and preparation method thereof
  • A kind of Wsialn thin film for piezoelectric thin film transducer and preparation method thereof
  • A kind of Wsialn thin film for piezoelectric thin film transducer and preparation method thereof

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preparation example Construction

[0034] In addition, the present invention also provides a preparation method of a WSiAlN thin film for a piezoelectric thin film transducer, such as figure 2 As shown, it may include the following steps:

[0035] Step S201 , using WSi material to form a bottom electrode on a silicon wafer.

[0036] In this embodiment, the molar ratio of W and Si in the WSi material is 1:2˜1:2.7, thereby ensuring that the c-axis orientation of the piezoelectric film is improved and its stress is reduced. Wherein, the use of WSi material to form the bottom electrode on the silicon wafer may include:

[0037]The bottom electrode is made of WSi material on the silicon wafer by DC magnetron sputtering, wherein the manufacturing process parameters of DC magnetron sputtering are: sputtering power 2000-4000W, argon flow rate 35-55sccm, back argon flow rate 15sccm. The present invention prepares the WSi bottom electrode by means of DC magnetron sputtering, which can ensure that the resistivity of th...

Embodiment 1

[0044] 1) The WSi bottom electrode is manufactured on the silicon wafer by DC magnetron sputtering, the manufacturing process: the sputtering power is 2000w, the flow rate of argon gas is 35 sccm, and the flow rate of argon gas on the back is 15 sccm.

[0045] 2) Rapid annealing at a high temperature of 600°C for 30 seconds.

[0046] 3) The AlN piezoelectric film was fabricated by AC magnetron sputtering under the process conditions of sputtering power of 3000w, argon gas flow rate of 4 sccm, and nitrogen gas flow rate of 10 sccm.

[0047] 4) test the rocking curve of the AlN piezoelectric film on the sample, as image 3 shown.

[0048] 5) Test the stress of the AlN piezoelectric thin film on the sample.

[0049] 6) Test the roughness of the AlN piezoelectric thin film on the sample.

Embodiment 2

[0051] 1) The WSi bottom electrode is manufactured on the silicon wafer by DC magnetron sputtering, the manufacturing process: the sputtering power is 3000w, the flow rate of argon gas is 45 sccm, and the flow rate of argon gas on the back is 15 sccm.

[0052] 2) Rapid annealing at a high temperature of 800°C for 60 seconds.

[0053] 3) The AlN piezoelectric film was fabricated by AC magnetron sputtering under the process conditions of sputtering power of 5000w, argon gas flow rate of 8 sccm, and nitrogen gas flow rate of 20 sccm.

[0054] 4) test the rocking curve of the AlN piezoelectric film on the sample, as Figure 4 shown.

[0055] 5) Test the stress of the AlN piezoelectric thin film on the sample.

[0056] 6) Test the roughness of the AlN piezoelectric thin film on the sample.

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Abstract

The invention provides a WSiAlN thin film for a piezoelectric thin film transducer and a preparation method thereof. The WSiAlN thin film for a piezoelectric thin film transducer includes a bottom electrode and a piezoelectric thin film on the bottom electrode. The bottom electrode is made of WSi material. The film is made of AlN material. In the present invention, by using WSi material to make the bottom electrode, which is arranged under the AlN piezoelectric film, the c-axis orientation of the piezoelectric film can be improved, the stress can be reduced, and the requirements of composite film materials for piezoelectric film transducers can be met. Therefore, the present invention provides The composite thin film material structure unit (that is, WSiAlN film) can be used as a new thin film material structure unit in piezoelectric thin film transducers.

Description

technical field [0001] The invention belongs to the field of piezoelectric film transducers, which are core components of bulk acoustic wave devices such as film bulk acoustic wave filters and bulk acoustic wave microwave delay lines, and specifically relates to a WSiAlN film for piezoelectric film transducers and a preparation method thereof. Background technique [0002] The core part of bulk acoustic wave devices such as thin-film bulk acoustic wave devices and bulk acoustic wave microwave delay lines is the piezoelectric thin-film transducer. The bulk acoustic wave piezoelectric film transducer is composed of a bottom electrode, a piezoelectric film and an upper electrode. The bottom electrode and the piezoelectric film are the key to the manufacture of the piezoelectric film transducer. Aluminum nitride (AlN) piezoelectric thin film is the preferred material for making piezoelectric thin film transducers because of its wide band gap, high breakdown voltage, high sound v...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/047H01L41/29H01L41/39H01L41/18H10N30/87H10N30/06H10N30/093H10N30/85
CPCH10N30/877H10N30/85H10N30/06H10N30/093
Inventor 欧黎徐阳江洪敏司美菊姜华男张永川马晋毅龙飞杜波蒋欣金成飞田本朗
Owner CHINA ELECTRONICS TECH GRP NO 26 RES INST
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