Array substrate, manufacturing method thereof and display device

Abstract

The invention discloses an array substrate, a manufacturing method thereof and a display device, which relate to the technical field of display and aim at improving the use stability of the array substrate. The array substrate comprises a substrate and a thin-film transistor arranged on the substrate, wherein a light shielding layer is arranged between the thin-film transistor and the substrate; the light shielding layer comprises a light shielding metal layer and a light reflection adjustment layer formed on the substrate in a stacked mode; the light reflection adjustment layer covers the light shielding metal layer; and the reflectivity of the light reflection adjustment layer is lower than that of the light shielding metal layer. According to the array substrate, the manufacturing method thereof and the display device provided by the invention, the array substrate adopts the thin-film transistor in a top gate structure.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] A thin film transistor (Thin Film Transistor, TFT for short), as a switching device, plays an important role in the field of display technology. Common thin film transistors include a gate, source, drain, and active layer, etc., and according to the relative positional relationship between the gate and the active layer, thin film transistors can be divided into thin film transistors with a top-gate structure and bottom-gate structures. structure of thin film transistors. [0003] At present, when a thin-film transistor with a top-gate structure is arranged on an array substrate, the active layer of the thin-film transistor is located between its gate and the base substrate of the array substrate, and a light-shielding layer is usually provided between the active layer...

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Problems solved by technology

[0004] However, because the existing light-shielding layer is generally made of metal materials, such as molybdenum (Mo) metal, etc., the light-shielding layer has a high light reflectivity.

Therefore, if there is external light, or reflected light from other functional film layers, and irradiates the surface of the light-shielding layer facing the active layer, the light-shielding layer can easily reflect the irradiated light into the conductive channel of the active layer, making the active layer The conductive channel of the thin film layer generates leakage current, which causes the shift of the threshold voltage of the thin film transistor, which makes the array substrate where the thin film transistor is located cannot be used stably.

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