Infrared detector with a titanium oxide thermosensitive layer prepared by oxidation method and preparation method thereof
A technology of infrared detectors and titanium oxide, which is applied in the fields of electric radiation detectors, semiconductor devices, final product manufacturing, etc., can solve the problem that the overlapped area is not effectively utilized, etc., so as to increase the effective area and increase the filling rate , cost-saving effect
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[0042] The principles and features of the present invention will be described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention and are not intended to limit the scope of the present invention.
[0043] Oxidation method among the present invention prepares the infrared detector of titanium oxide thermosensitive layer, as Figure 9 As shown, an infrared detector with a titanium oxide heat-sensitive layer prepared by an oxidation method includes a semiconductor base 1 with a readout circuit and a detector body electrically connected to the semiconductor base 1, and the detector body includes a metal reflector layer 2, an insulating medium layer 3 and a supporting layer 5, the semiconductor base 1 is provided with a metal reflective layer 2 and an insulating medium layer 3, and the metal reflective layer 2 includes several metal blocks 2-1;
[0044]The insulating medium layer 3 is provided with a supporting ...
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