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Infrared detector with a titanium oxide thermosensitive layer prepared by oxidation method and preparation method thereof

A technology of infrared detectors and titanium oxide, which is applied in the fields of electric radiation detectors, semiconductor devices, final product manufacturing, etc., can solve the problem that the overlapped area is not effectively utilized, etc., so as to increase the effective area and increase the filling rate , cost-saving effect

Active Publication Date: 2017-08-18
YANTAI RAYTRON TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the existing process, the contact between the electrode and the heat-sensitive film is deposited by different films, and the overlapping area of ​​the two is electrically interconnected through the contact hole, and the overlapping area has not been effectively utilized.

Method used

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  • Infrared detector with a titanium oxide thermosensitive layer prepared by oxidation method and preparation method thereof
  • Infrared detector with a titanium oxide thermosensitive layer prepared by oxidation method and preparation method thereof
  • Infrared detector with a titanium oxide thermosensitive layer prepared by oxidation method and preparation method thereof

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Embodiment Construction

[0042] The principles and features of the present invention will be described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention and are not intended to limit the scope of the present invention.

[0043] Oxidation method among the present invention prepares the infrared detector of titanium oxide thermosensitive layer, as Figure 9 As shown, an infrared detector with a titanium oxide heat-sensitive layer prepared by an oxidation method includes a semiconductor base 1 with a readout circuit and a detector body electrically connected to the semiconductor base 1, and the detector body includes a metal reflector layer 2, an insulating medium layer 3 and a supporting layer 5, the semiconductor base 1 is provided with a metal reflective layer 2 and an insulating medium layer 3, and the metal reflective layer 2 includes several metal blocks 2-1;

[0044]The insulating medium layer 3 is provided with a supporting ...

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Abstract

The present invention relates to an infrared detector with a titanium oxide thermosensitive layer prepared by an oxidation method. A bridge floor region of a support layer is provided with a titanium oxide film, the titanium oxide film is a semiconductor, and a bridge leg region connecting a metal and the support layer is provided with a titanium film in the same layer as the titanium oxide film, the titanium film is provided with a first protective layer, and the titanium oxide film and the first protective layer are provided with a second protective layer. The present invention also relates to a preparing method for the detector, and the method includes the steps of sequentially depositing a titanium film and a first protective layer on a support layer; removing a film of the first protective layer on a bridge floor; and oxidizing the titanium film exposed on the bridge floor to form a titanium oxide film as a thermosensitive film. The titanium film is directly deposited on the support layer, and the titanium film in the bridge floor region is oxidized and converted into the titanium oxide film as the thermosensitive film, so that the process of depositing a specific metal electrode layer is not required, the process steps can be greatly simplified, and the production capacity is improved.

Description

technical field [0001] The invention belongs to the field of micro-electromechanical system process manufacturing in semiconductor technology, and in particular relates to an infrared detector for preparing a titanium oxide heat-sensitive layer by an oxidation method and a preparation method thereof. Background technique [0002] Uncooled infrared detection technology is a technology that senses the infrared radiation (IR) of external objects without a cooling system and converts it into an electrical signal that is processed and output on the display terminal. It can be widely used in many fields such as national defense, aerospace, medicine, production monitoring, etc. . Uncooled infrared focal plane detectors are able to work at room temperature, and have the advantages of light weight, small size, long life, low cost, low power, fast startup and good stability, etc., which meet the needs of civilian infrared systems and some military The urgent need for long-wave infrar...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/0232H01L31/032H01L31/101H01L31/18G01J5/10
CPCG01J5/10H01L31/022425H01L31/0232H01L31/032H01L31/101H01L31/18Y02P70/50
Inventor 杨鑫王宏臣陈文礼王鹏甘先锋董珊孙丰沛
Owner YANTAI RAYTRON TECH
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