Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Room temperature nitrogen dioxide sensor preparation method based on reduced graphene-semiconductor

A nitrogen dioxide and semiconductor technology, which is applied in the field of preparation of room temperature nitrogen dioxide sensors based on reduced graphene-semiconductor, can solve the problems of increasing detection safety risk, slow response and recovery speed, and increasing sensor power consumption, and achieves multi-NO2 Effects of molecular adsorption sites, fast response and recovery rates, and fast electron transport rates

Inactive Publication Date: 2017-08-18
YANGZHOU UNIV
View PDF10 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the pure metal oxide semiconductor gas sensor can work at a higher temperature, which greatly limits its practical application. High temperature gas detection will bring many problems, such as increasing the power consumption of the sensor, reducing the life of the sensor and Increase the safety risk of detection (for example, if there is flammable gas in the detection atmosphere, it may cause an explosion), etc. Sina.com has reported news that high-temperature metal oxide semiconductor gas sensors caused explosions under high-concentration flammable gases. Therefore, There is an urgent need to find ways to reduce the operating temperature of metal oxide semiconductor gas sensors
In addition, studies have shown that pure metal oxide SnO 2 , ZnO, TiO 2 、WO 3 and other semiconductor materials for NO 2 The sensitivity of gas is low, and its response and recovery speed are very slow, so it is necessary to find ways to improve the sensitivity of pure semiconductor materials to low concentrations of NO 2 Gas Sensitive Performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Room temperature nitrogen dioxide sensor preparation method based on reduced graphene-semiconductor
  • Room temperature nitrogen dioxide sensor preparation method based on reduced graphene-semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1. Mix 2.0g graphite and 1.0g NaNO 3 Added to 46ml concentrated H under ice bath condition 2 SO 4 and stir for 1h

[0030] 2. Then add 6g KMnO 4 Add to the above mixture, and stir for 2h under ice bath conditions, then transfer to a constant temperature water bath at 38°C

[0031] 3. Then add 160ml deionized water to the above mixture and control the temperature at 95°C for 0.5h

[0032] 4. Then add 120ml deionized water to the above mixed solution and terminate the reaction

[0033] 5. Then add 30ml of 30% H to the above mixed solution 2 o 2 Reaction 30min

[0034] 6. Then add 30ml of 5% HCl, and wash with a centrifuge until neutral to prepare a suspension of graphene oxide

[0035] 7. Weigh 1.89g of zinc nitrate powder and dissolve it in 6ml of deionized water, and use a magnetic stirrer or other stirring device to obtain a uniform solution

[0036] 8. Then add 6ml of the previously prepared graphene oxide (GO) suspension and 6g of urea powder to the above mi...

Embodiment 2

[0047] The difference between this example and Example 1 is that in step 7, 2.32g of crystalline tungsten hexachloride is weighed and dissolved in 5ml of absolute ethanol, and a uniform solution is obtained by magnetic stirring; 5ml of GO suspension and 5g of urea powder prepared above are used to obtain a homogeneous mixture using a high-speed stirrer or other stirring devices; in step 9, the mixture obtained above is transferred to a stainless steel autoclave with a Teflon substrate, and then the reaction The kettle was placed in an oven and kept at 180°C for 3 hours; in step 10, the reacted suspension was washed with water and ethanol in a centrifuge several times and dried in air to obtain rGO@WO 3 powder; in step 17, coating against 80ppm NO 2 , the sensitivity of the sensor is 13.82 respectively.

Embodiment 3

[0049] The difference between this embodiment and embodiment 1 is: take by weighing 1.56g crystal potassium stannate K in step 7 2 SnO 3 Dissolve in 5ml of deionized water, and use magnetic stirring to obtain a homogeneous solution; in step 8, add the GO suspension 5ml and urea powder 5g prepared above to the above mixture, and use a high-speed stirrer or other stirring devices to obtain a homogeneous mixture; In 9, the mixture obtained above was transferred to a stainless steel autoclave with a Teflon substrate, and then the reactor was put into an oven and kept at 240 degrees for 4h; in step 10, the reacted suspension was mixed with water and ethanol in Rinse multiple times in a centrifuge and dry in air to obtain rGO@SnO 2 powder; in step 17, coating against 15ppm NO 2 , the sensitivity of the sensor is 5.63 respectively.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a room temperature nitrogen dioxide sensor preparation method based on a reduced graphene-semiconductor. The preparation method comprises: adding graphite and NaNO3 into H2SO4, adding KMnO4, carrying out a reaction in a constant temperature water bath pot, adding deionized water, terminating the reaction, adding a H2O2 solution and hydrochloric acid to obtain an oxidized graphene suspension, dissolving inorganic salt powder in deionized water, adding the obtained solution to the oxidized graphene suspension, drying in a high pressure kettle to obtain corresponding powder, preparing an interdigital electrode and a wiring terminal on the front surface of a substrate by using a monocrystal silicon wafer Si as an insulating substrate, and preparing a reduced graphene-semiconductor composite coating just above the interdigital electrode. According to the present invention, the defects of sensor power consumption increasing, sensor service lifer shortening, detection safety risk increasing and the like in the prior art are overcome with the preparation method of the present invention; and the characteristics of large specific surface area, fast electron transport, good light absorption, fast response, fast recovery and lower working temperature of the reduced graphene are utilized.

Description

technical field [0001] The invention relates to engineering and material science, in particular to a method for preparing a nitrogen dioxide sensor at room temperature based on reduced graphene-semiconductor. Background technique [0002] NO 2 It is an important air pollutant. When its concentration exceeds 0.1ppm, it will cause severe inflammation of people's respiratory tract, especially for infants and young children. With the intensification of industrialization and the advancement of economic construction, this kind of Toxic gas emissions will increase day by day. Therefore to NO 2 Gas concentration monitoring has always been the focus of research. If there is a slight carelessness, there will be problems in the monitoring process, which will cause property damage at least, and endanger life at worst. To reduce NO 2 To determine the degree of pollution of gases, we must first work hard on the detection of these gases. Such polluting gases have brought huge negative...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
Inventor 张超耿欣罗一凡
Owner YANGZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com