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Radio frequency plasma enhanced chemical vapor deposition method and device

A technology of radio frequency plasma and enhanced chemistry, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of ion density reduction, achieve consistent structure, avoid ion concentration reduction, and uniform deposition composition Effect

Active Publication Date: 2017-08-04
ZHENGZHOU NEW CENTURY MATERIALS GENOME INST CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a radio frequency plasma enhanced chemical vapor deposition method, thereby solving the problem that the ion density decreases in the process of the plasma beam flowing to the substrate in the existing method

Method used

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  • Radio frequency plasma enhanced chemical vapor deposition method and device
  • Radio frequency plasma enhanced chemical vapor deposition method and device
  • Radio frequency plasma enhanced chemical vapor deposition method and device

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Embodiment Construction

[0026] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0027] Embodiment 1 of the radio frequency plasma enhanced chemical vapor deposition device of the present invention, as figure 1 As shown, it includes a cylindrical plasma generation chamber 2 and a coating chamber 1 communicated with the plasma generation chamber 2. The outer periphery of the plasma generation chamber 2 is provided with a radio frequency antenna 3 and a ring source magnet 4, and the radio frequency antenna 3 and the radio frequency source 31 connection, the ring-shaped source magnet 4 is positioned at the downstream of the radio frequency antenna; the coating chamber 1 includes a square cylindrical casing and a left side wall 101 and a right side wall 102 arranged at two ends of the square cylindrical casing, and the plasma generation chamber has a reaction gas inlet 20 With outlet 21, the outlet is connected with the left si...

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Abstract

The invention relates to a radio frequency plasma enhanced chemical vapor deposition method and a radio frequency plasma enhanced chemical vapor deposition device. The radio frequency plasma enhanced chemical vapor deposition method comprises the following steps: a coating chamber is subjected to vacuumizing, reactant gas is supplied from a plasma generation chamber, a radio frequency source connected with a radio frequency antenna is started for exciting the reactant gas to be ionized, a terminal magnetic body for restricting a plasma flow to diffuse in the radial direction is arranged on one side, opposite to the plasma generation chamber, of the coating chamber, the magnetic induction intensity of the terminal magnetic body is set to be greater than that of a source magnetic body, and coating is carried out. According to the radio frequency plasma enhanced chemical vapor deposition method, by employing the synergistic effect of the source magnetic body and the terminal magnetic body, field restriction and distribution regulation on plasma beam current entering the coating chamber are carried out, the plasma beam current achieves a long-distance stable effect and a distribution controllable effect, the ion density of the plasma beam current is equivalent to the ion density nearby a plasma source in the plasma generation chamber, so that long-distance stable propagation of the plasma beam current is realized.

Description

technical field [0001] The invention belongs to the field of radio frequency plasma enhanced chemical vapor deposition, in particular to a radio frequency plasma enhanced chemical vapor deposition method and device. Background technique [0002] Plasma-enhanced chemical vapor deposition uses a low-temperature plasma source to conduct gas discharge to plasmatize the reactive gas, thereby opening the chemical bonds of the reactive gas, causing the cracking of the reactive gas, and promoting the deposition of the cracked product on the substrate to form a solid film. Low-temperature plasma discharge mainly includes three forms: direct current, radio frequency and microwave. Compared with DC discharge, radio frequency plasma discharge can work under lower air pressure, the ionization effect is more significant, and the space distribution is very uniform; The energy of photodischarge is high, and generally it can only be used for the treatment of metals and inorganic materials. ...

Claims

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Application Information

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IPC IPC(8): C23C16/507C23C16/513
CPCC23C16/507C23C16/513
Inventor 邵国胜
Owner ZHENGZHOU NEW CENTURY MATERIALS GENOME INST CO LTD
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