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Recovery method of copper indium gallium diselenide material

A copper indium gallium selenide and recovery method technology, which is applied in chemical instruments and methods, gallium/indium/thallium compounds, copper sulfate, etc., can solve problems such as high production costs, lower gallium recovery rate, and large oxidant consumption, and achieve reduction Good volatilization and separation of acid gas, high product purity

Active Publication Date: 2017-07-28
HANERGY MOBILE ENERGY HLDG GRP CO LTD
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AI Technical Summary

Problems solved by technology

[0007] In the above-mentioned prior art techniques, the use of hydrochloric acid and hydrogen peroxide leaching will consume a large amount of oxidant, and hydrochloric acid is volatile, and it is an exothermic reaction in the leaching reaction process, causing a large amount of hydrochloric acid to volatilize, and the pollution is relatively serious
At the same time, the extraction agent used in the extraction of indium produces co-extraction of gallium, which makes it difficult to separate indium and gallium, thereby reducing the recovery rate of gallium.
On the other hand, the method of replacing copper with indium is used, and the production cost is too high

Method used

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  • Recovery method of copper indium gallium diselenide material
  • Recovery method of copper indium gallium diselenide material

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Embodiment Construction

[0042] The embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0043] Such as figure 1 As shown, the recovery method of the copper indium gallium selenide material of the present invention mainly includes the following steps:

[0044] In step A, 200 g of copper indium gallium selenide material is placed in a ball mill, ball milled to a powder below 40 mesh, and dried at 100° C. for 4 hours.

[0045] Step B, dilute concentrated sulfuric acid to 25%, mix 200g of drying material with 25% concentrated sulfuric acid at a solid-to-liquid ratio of 1:5, raise the temperature to 90°C, and feed hydrogen peroxide at a rate of 8ml / min, with a stirring rate of 600r / min, leaching at constant temperature for 3 hours, and filtering out the residue after leaching to obtain a pure leaching solution.

[0046] Step C: After raising the temperature of the leaching solution to 65°C, feed sulfur dioxide gas at a rate of 10L / min and...

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Abstract

The invention discloses a recovery method of a copper indium gallium diselenide material. The recovery method mainly comprises the steps of sulfuric acid and hydrogen peroxide leaching, sulfur dioxide selenium reduction, copper ammonia complexing copper separation, alkali indium and gallium separation, indium replacement, gallium hydrolyzing and the like. According to the recovery method of the copper indium gallium diselenide material, sulfuric acid cooperates with hydrogen peroxide for leaching, the leaching rate is greatly increased, and acid gas pollution is reduced; through copper ammonia complexing copper separation, sediment cannot be generated, and metal ions can be separated well; and alkali gallium separation is adopted, indium and gallium separation can be achieved simply by adjusting the PH value of a solution, the separation effect is good, and the purity of obtained indium and gallium products is high.

Description

technical field [0001] The invention relates to a method for recycling copper indium gallium selenide photovoltaic components, in particular to a method for recycling copper indium gallium selenide materials. Background technique [0002] Copper indium gallium selenide thin film solar cells have many advantages and are favored by the market. It is the biggest hotspot in the research and development, scale production and application of thin film solar cells in recent years. The absorption layer of copper indium gallium selenium solar cells is composed of copper, indium, gallium, and selenium in an optimal ratio to form a chalcopyrite structure, which can absorb a wide range of spectral wavelengths, except for the visible spectral range where amorphous silicon solar cells can absorb light , and can also cover the near-infrared region with a wavelength between 700 and 2000nm, that is, the longest power generation time in a day. Compared with crystalline silicon solar cells of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B7/00C22B15/00C22B58/00C01B19/02C25C1/12
CPCC01B19/02C22B7/007C22B15/0071C22B15/0089C22B58/00Y02P10/20C22B7/005C22B15/0086C22B7/006C22B15/0084C25C1/12C22B15/00C22B7/00C01G3/10C01G15/00C01P2006/80C22B1/005
Inventor 高永涛刘军飞王冠吴国发
Owner HANERGY MOBILE ENERGY HLDG GRP CO LTD
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