Method for preparing tantalum oxide film by direct current magnetron sputtering method

Abstract

The invention discloses a method for preparing a tantalum oxide film by a direct current magnetron sputtering method. The method comprises the following steps: taking a preprocessed base material and placing in a reaction chamber of a magnetron sputtering instrument, after vacuumizing the reaction chamber, charging Ar with a purity of 99.95% as working gas and O2 with a purity being 99.95% as reactive gas, adjusting a sputtering working gas pressure, setting sputtering power, sputtering a Ta target material, and obtaining the tantalum oxide film on the base material. According to the method for preparing a tantalum oxide film by a direct current magnetron sputtering method, an obtained TaOx film has excellent ion transmission performance, low conductivity and higher transmittance. The tantalum oxide film layer is better in compactness.

Description

technical field [0001] The invention relates to a method for preparing a tantalum oxide thin film by a DC magnetron sputtering method, and specifically belongs to the technical field of thin film preparation. Background technique [0002] Fast ion conductors were first used in high-density batteries made of liquid electrolytes. Because fast ion conductor materials can be applied to long-life, low-energy miniature solid-state batteries, they can also be used in integrated circuits, and the latter has also undergone many long-term developments with the development of science and technology, which in turn has driven the development of related fast ion conductors. research progress. [0003] At present, there are four types of fast ion conductors, which are monovalent cation solid electrolytes, divalent cation solid electrolytes, trivalent cation solid electrolytes, and tetravalent cation solid electrolytes. Some progress has been made in the research of each category. The mo...

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Problems solved by technology

The only research on oxide fast ion conductors, such as TaOx and ZrOx, still has many problems that cannot be solved when used in electrochromic devices, such as the cycle life of the device is still not high, and the response speed is not fast enough.

There is no unified understanding of the mechanism of ion implantation, and the recombination of each film layer is not ideal.

The domestic research on fast ion transport thin films has been emerging recently, especially for the research on fast ion thin films used in electrochromic devices, there are still the following problems: (1) The current research is still focused on the fast ion conductors of polymer materials , there is still little research on inorganic all-solid-state fast ion thin films

(2) Most of the research on the preparation of this layer of thin film by sol-gel method and evaporation method, using magnetron sputtering, especially the research of DC reactive magnetron sputtering is still less

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