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A photoelectrochemical sensor using copper molybdate/barium titanate p-n heterojunction as photoelectric active material, its construction method and application

A construction method and photoelectrochemical technology, applied in the field of analysis and detection, can solve problems such as narrow detection range, high detection limit, and unsuitability for widespread use, and achieve the effects of easy control of preparation conditions, high selectivity, and high sensitivity

Inactive Publication Date: 2018-11-30
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the photoelectrochemical sensor has low photoelectric conversion efficiency, narrow detection range, and high detection limit in the visible light region, which is not suitable for widespread use.

Method used

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  • A photoelectrochemical sensor using copper molybdate/barium titanate p-n heterojunction as photoelectric active material, its construction method and application
  • A photoelectrochemical sensor using copper molybdate/barium titanate p-n heterojunction as photoelectric active material, its construction method and application
  • A photoelectrochemical sensor using copper molybdate/barium titanate p-n heterojunction as photoelectric active material, its construction method and application

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preparation example Construction

[0035] 2) Preparation of nano-copper molybdate: dissolve polyvinylpyrrolidone and sodium molybdate in water, add copper sulfate solution, mix evenly to obtain a suspension, transfer the suspension to a hydrothermal reaction kettle, and perform a hydrothermal reaction. After the reaction, filter, wash the obtained precipitate with absolute ethanol and water, dry and sinter;

[0036] 3) Preparation of copper molybdate stock solution: dissolve nano-copper molybdate and Nafion in ethanol, and mix well;

[0037] 4) Preparation of barium titanate stock solution: dissolving nano barium titanate in ethanol and mixing evenly;

[0038] 5) Preparation of photoelectrochemical sensor: Coating the copper molybdate stock solution on the conductive glass sheet, drying, then immersing the conductive glass sheet in the barium titanate stock solution, pulling out the conductive glass sheet, drying, and obtaining the modified molybdic acid Electrode of copper / barium titanate p-n heterojunction, ...

Embodiment 1

[0054] 1) Pretreatment of FTO electrodes: Cut FTO conductive glass to a size of 0.8cm×1.5cm, use acetone, ethanol and ultrapure water to clean ultrasonically for 30 minutes, and dry naturally;

[0055] 2) Preparation of nano-copper molybdate: Dissolve 0.16g polyvinylpyrrolidone (K29-32) and 3mmol sodium molybdate in 30mL ultrapure water, stir at room temperature for 30min, add 30mL molar concentration of 0.1mol / L copper sulfate solution, and stir at room temperature After 30 minutes, the suspension was obtained, and the suspension was transferred to a 100mL hydrothermal reaction kettle, and reacted at 110°C for 12h. After the reaction, filtered, washed with absolute ethanol and water for several times, dried in vacuum at 60°C for 12h, 500 Sintering at ℃ for 3h;

[0056] 3) Preparation of copper molybdate stock solution: dissolve 15 mg of nano-copper molybdate and 5 μL of Nafion in 1 mL of ethanol, and sonicate for 1 h;

[0057] 4) Preparation of barium titanate stock solution...

Embodiment 2

[0061] 1) Pretreatment of ITO electrodes: Cut the ITO conductive glass to a size of 0.8cm×1.5cm, use acetone, ethanol and ultrapure water to clean it ultrasonically for 30 minutes, and dry it naturally;

[0062] 2) Preparation of nano-copper molybdate: Dissolve 0.18g polyvinylpyrrolidone (K29-32) and 4mmol sodium molybdate in 30mL ultrapure water, stir at room temperature for 30min, add 40mL molar concentration of 0.1mol / L copper sulfate solution, and stir at room temperature After 30 minutes, the suspension was obtained, and the suspension was transferred to a 100mL hydrothermal reaction kettle, and reacted at 100°C for 15h. After the reaction was completed, filtered, washed with absolute ethanol and water for several times, and vacuum-dried at 60°C for 12h, 400°C Sintering at ℃ for 5h;

[0063] 3) Preparation of copper molybdate stock solution: dissolve 20 mg nano-copper molybdate and 10 μL Nafion in 2 mL ethanol, and sonicate for 1 h;

[0064] 4) Preparation of barium tita...

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Abstract

The invention discloses a photoelectrochemical sensor using copper molybdate / barium titanate p-n heterojunction as a photoelectric active material and its construction method and application. The construction method of the photoelectrochemical sensor includes the following steps: 1) conductive glass 2) Preparation of nano-copper molybdate; 3) Preparation of copper molybdate stock solution; 4) Preparation of barium titanate stock solution; 5) Preparation of photoelectrochemical sensor: first modify nano-molybdenum on conductive glass Copper molybdate, and then use the pulling method to attach nano-barium titanate to its surface to form a p-n heterojunction, and obtain an electrode modified with copper molybdate / barium titanate p-n heterojunction. The photoelectrochemical sensor of the invention has a strong photoelectric signal in the range of visible light, has high sensitivity and high selectivity, and is more convenient and faster than the existing cysteine ​​sensor. The invention prepares the copper molybdate through the hydrothermal method, the preparation conditions are easy to control, and the quantitative production of the photoelectrochemical sensor is convenient.

Description

technical field [0001] The invention relates to a photoelectrochemical sensor using copper molybdate / barium titanate p-n heterojunction as a photoelectric active material, its construction method and application, and belongs to the technical field of analysis and detection. Background technique [0002] Photoelectrochemical sensor is a new type of photoelectric analysis and testing element recently developed, which has attracted much attention due to its advantages of high sensitivity and simple equipment. Its detection process is just the opposite of electroluminescence. It relies on physical or chemical light sources as excitation signals and electrical signals as detection objects, so it can achieve comparable or even higher sensitivity than electroluminescence. [0003] Semiconductor material is a kind of material with photoelectric response. Under the excitation of a suitable light source, the electrons in the valence band of the semiconductor can jump to the conduction...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/30G01N27/36B82Y30/00
CPCB82Y30/00G01N27/30G01N27/36
Inventor 邓洪陈素素陈新丽吕嘉欣李核黄丽娴
Owner SOUTH CHINA NORMAL UNIVERSITY
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