Trench-gate enhanced type MIS structure AlGaN/GaN heterojunction field effect transistor

Abstract

The invention discloses a trench-gate enhanced type MIS structure AlGaN / GaN heterojunction field effect transistor which is provided with a part of intrinsic GaN cap layer. The novel structure of the field effect transistor is formed in a manner of introducing the intrinsic GaN cap layer to the edge of a transistor gate, wherein the intrinsic GaN cap layer will reduce the two-dimensional electron gas concentration of a regional conductive trench, and achieves the electric field modulation effect. Through a new electric field peak, the transistor reduces the high electric field of the gate edge, and enables the distribution of the electric field of the surface of the transistor to be more uniform. Compared with a conventional trench-gate enhanced type MIS structure, the novel structure greatly improves the breakdown voltage and reliability.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a trench gate enhanced MIS structure AlGaN / GaN heterojunction field effect transistor. Background technique [0002] Due to the limitations of the first-generation and second-generation semiconductor materials represented by Si and GaAs, the third-generation wide-bandgap semiconductor materials have been developed rapidly because of their excellent performance. As one of the cores of the third-generation semiconductor materials, GaN material is special in its polarization effect compared with Si, GaAs and SiC. Taking advantage of this particularity, people have developed AlGaN / GaN high electron mobility transistors, and AlGaN / GaN HEMTs are GaN-based microelectronic devices based on AlGaN / GaN heterojunction materials. AlGaN / GaN heterojunction forms a high-density two-dimensional electron gas (2DEG) at the heterojunction interface through spontaneous polarization and...

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Problems solved by technology

[0008] In order to solve the device avalanche breakdown and current collapse effect caused by the peak electric field at the gate edge of the AlGaN / GaN heterojunction field effect transistor with a trench-gate enhanced MIS structure in the prior art, the threshold voltage and output current are reduced, and the reliability To solve a series of problems such as low performance, the present invention provides a novel trench gate enhanced MIS structure AlGaN / GaN heterojunction field effect transistor

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