Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Trench Gate Enhanced Algan/gan Heterojunction Field Effect Transistor

A heterojunction field effect, enhanced technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of threshold voltage and output current reduction, device avalanche breakdown, reliability reduction, etc., and reach the breakdown voltage The effect of improving, increasing peak electric field drop, and enhancing electric field modulation effect

Active Publication Date: 2020-08-21
XIDIAN UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the device avalanche breakdown and current collapse effect caused by the peak electric field at the gate edge of the trench gate enhanced AlGaN / GaN heterojunction field effect transistor in the prior art, the threshold voltage and output current are reduced, and the reliability is reduced A series of problems such as, the present invention provides a kind of novel trench gate enhancement type AlGaN / GaN heterojunction field effect transistor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Trench Gate Enhanced Algan/gan Heterojunction Field Effect Transistor
  • A Trench Gate Enhanced Algan/gan Heterojunction Field Effect Transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, a detailed description will be given below in conjunction with the accompanying drawings and specific embodiments.

[0032] This embodiment is a novel trench gate enhanced AlGaN / GaN heterojunction field effect transistor with part of the intrinsic GaN cap layer. Its structure is as figure 1 As shown, it mainly includes: semi-insulating substrate 0; heteroepitaxially grown AlN nucleation layer 1 on the semi-insulating substrate; GaN buffer layer 2 epitaxially grown on the AlN nucleation layer; epitaxially grown on the GaN buffer layer The AlGaN barrier layer 3; the gate groove 4, the drain 5 and the source 6 on the AlGaN barrier layer; the gate 7 on the gate groove; Intrinsic GaN cap layer 8 adjacent to the extreme edge.

[0033] The trench gate structure is a commonly used method to realize the enhancement mode. By etching the barrier layer under...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a trench-gate enhanced type AlGaN / GaN heterojunction field effect transistor which is provided with a part of intrinsic GaN cap layer. The novel structure of the field effect transistor is formed in a manner of introducing the intrinsic GaN cap layer to the edge of a transistor gate, wherein the intrinsic GaN cap layer will reduce the two-dimensional electron gas concentration of a regional conductive trench, and achieves the electric field modulation effect. Through a new electric field peak, the transistor reduces the high electric field of the gate edge, and enables the distribution of the electric field of the surface of the transistor to be more uniform. Compared with a conventional trench-gate enhanced type structure, the novel structure greatly improves the breakdown voltage and reliability.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a trench gate enhanced AlGaN / GaN heterojunction field effect transistor. Background technique [0002] Due to the limitations of the first-generation and second-generation semiconductor materials represented by Si and GaAs, the third-generation wide-bandgap semiconductor materials have been developed rapidly because of their excellent performance. As one of the cores of the third-generation semiconductor materials, GaN material is special in its polarization effect compared with Si, GaAs and SiC. Taking advantage of this particularity, people have developed AlGaN / GaN high electron mobility transistors, and AlGaN / GaN HEMTs are GaN-based microelectronic devices based on AlGaN / GaN heterojunction materials. AlGaN / GaN heterojunction forms a high-density two-dimensional electron gas (2DEG) at the heterojunction interface through spontaneous polarization and piezoelectric...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/423H01L29/417
CPCH01L29/417H01L29/4232H01L29/778H01L29/7782
Inventor 段宝兴郭海君谢慎隆袁嵩杨银堂
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products