A Trench Gate Enhanced Algan/gan Heterojunction Field Effect Transistor
A heterojunction field effect, enhanced technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of threshold voltage and output current reduction, device avalanche breakdown, reliability reduction, etc., and reach the breakdown voltage The effect of improving, increasing peak electric field drop, and enhancing electric field modulation effect
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[0031] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, a detailed description will be given below in conjunction with the accompanying drawings and specific embodiments.
[0032] This embodiment is a novel trench gate enhanced AlGaN / GaN heterojunction field effect transistor with part of the intrinsic GaN cap layer. Its structure is as figure 1 As shown, it mainly includes: semi-insulating substrate 0; heteroepitaxially grown AlN nucleation layer 1 on the semi-insulating substrate; GaN buffer layer 2 epitaxially grown on the AlN nucleation layer; epitaxially grown on the GaN buffer layer The AlGaN barrier layer 3; the gate groove 4, the drain 5 and the source 6 on the AlGaN barrier layer; the gate 7 on the gate groove; Intrinsic GaN cap layer 8 adjacent to the extreme edge.
[0033] The trench gate structure is a commonly used method to realize the enhancement mode. By etching the barrier layer under...
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