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Perovskite CsPbBr3 thin film modified by zinc oxide nanoparticles and application of perovskite CsPbBr3 thin film

A zinc oxide nano, perovskite technology, applied in the structure of the active area, sustainable manufacturing/processing, final product manufacturing, etc., can solve the problem of low precursor concentration, poor film uniformity, and poor crystallinity of grains problem, to achieve the effect of fast carrier transfer rate, high density, and improved crystallinity

Active Publication Date: 2017-06-13
北京京通光能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the preparation of CsPbBr 3 For thin films, one-step or two-step methods are usually used. In this process, due to the existence of inherent problems such as the wettability of the spin-coated substrate and the low concentration of the precursor solution, there are still many problems in the prepared film, such as poor film uniformity, Poor compactness (there are many voids), poor flatness, poor grain crystallinity, etc. These problems have a great impact on the subsequent thin film devices, which seriously limit the performance of the device

Method used

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  • Perovskite CsPbBr3 thin film modified by zinc oxide nanoparticles and application of perovskite CsPbBr3 thin film
  • Perovskite CsPbBr3 thin film modified by zinc oxide nanoparticles and application of perovskite CsPbBr3 thin film
  • Perovskite CsPbBr3 thin film modified by zinc oxide nanoparticles and application of perovskite CsPbBr3 thin film

Examples

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Embodiment 1

[0032]One-step preparation of ZnO nanoparticles-modified perovskite CsPbBr 3 film, the preparation process is as follows figure 1 shown

[0033] Mix CsBr powder, PbBr at a molar ratio of 1:1 2 Add the powder into dimethyl sulfoxide and mix well to prepare CsPbBr 3 precursor, and then to the CsPbBr 3 Zinc oxide nanoparticles were added to the precursor solution to a final concentration of 120 mg / mL to prepare CsPbBr containing zinc oxide nanoparticles 3 Precursor solution, and then CsPbBr containing ZnO nanoparticles 3 The precursor solution was spin-coated on the substrate and heated at 60 °C for 10 h to prepare ZnO nanoparticles-modified perovskite CsPbBr 3 film.

Embodiment 2

[0035] One-step preparation of ZnO nanoparticles-modified perovskite CsPbBr 3 film, the preparation process is as follows figure 1 shown

[0036] Mix CsBr powder, PbBr at a molar ratio of 1:1 2 Add the powder into dimethyl sulfoxide and mix well to prepare CsPbBr 3 precursor, and then to the CsPbBr 3 Zinc oxide nanoparticles were added to the precursor solution to a final concentration of 60 mg / mL to prepare CsPbBr containing zinc oxide nanoparticles 3 Precursor solution, and then CsPbBr containing ZnO nanoparticles 3 The precursor solution was spin-coated on the substrate and heated at 100 °C for 0.5 h to prepare ZnO nanoparticles-modified perovskite CsPbBr 3 film.

Embodiment 3

[0038] One-step preparation of ZnO nanoparticles-modified perovskite CsPbBr 3 film, the preparation process is as follows figure 1 shown

[0039] Mix CsBr powder, PbBr at a molar ratio of 1:1 2 Add the powder into dimethyl sulfoxide and mix well to prepare CsPbBr 3 precursor, and then to the CsPbBr 3 Zinc oxide nanoparticles were added to the precursor solution to a final concentration of 180 mg / mL to prepare CsPbBr containing zinc oxide nanoparticles 3 Precursor solution, and then CsPbBr containing ZnO nanoparticles 3 The precursor solution was spin-coated on the substrate and heated at 80 °C for 5 h to prepare ZnO nanoparticles-modified perovskite CsPbBr 3 film.

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Abstract

The invention relates to a perovskite CsPbBr3 thin film modified by zinc oxide nanoparticles and application of the perovskite CsPbBr3 thin film, and belongs to the technical field of semiconductor materials. The thin film is prepared through a one-step method or a two-step method, the prepared perovskite CsPbBr3 thin film modified by the zinc oxide nanoparticles is high in compactness, large in covering rate, uniform in crystallization and high in charge carrier transferring rate, can improve the film layer quality of the side of the film, can increase the switch ratio and light response rate of an optical detector when used in the optical detector, and can improve the spectral emission intensity of a micro laser and reduce the laser excitation threshold when used in the micro laser.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, in particular to perovskite CsPbBr modified by zinc oxide nanoparticles 3 Films and their applications. Background technique [0002] As a key material in the information age, semiconductors have been influencing the development of human information technology and the development of world science and technology all the time in the past few decades. In many practical applications of semiconductor materials, semiconductor thin film devices are widely used in light detection, micro laser, electroluminescence, solar energy conversion and other fields. Among them, optical detectors can convert optical signals into electrical signals, and are widely used in optical switches, optical triggers, image sensors, etc.; micro-lasers are in urgent demand in fine processing, laser printing, and other fields; thin-film electroluminescent devices are widely used. Widely used in high-quality disp...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/18H01S5/30
CPCH01L31/0321H01L31/18H01S5/3027H01S5/3086Y02P70/50
Inventor 臧志刚李存龙韩层唐孝生
Owner 北京京通光能科技有限公司
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