A switch device for lithium battery protection and manufacturing method thereof
A technology for switching devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of large area, large internal resistance in the drift region of MOSFET, etc., and achieve regional resistance reduction and conduction internal resistance The effect of low and simple overall structure of the device
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Embodiment 1
[0060] Such as Figure 2 to Figure 9 As shown, this embodiment provides a manufacturing method for a switching device for lithium battery protection, the manufacturing method includes steps:
[0061] Such as figure 2 As shown, step 1) is performed first, providing a P+ type substrate 101, and forming a P− type epitaxial layer 102 on the surface of the P+ type substrate 101.
[0062] Specifically, the doping concentration of the P+ type substrate 101 is 1e18-1e19 / cm 3 , using an epitaxial method to form a P-type epitaxial layer 102 on the surface of the P+ type substrate 101, and the doping concentration of the P-type epitaxial layer 102 is 1e16-1e17 / cm 3 .
[0063] Such as figure 2 As shown, then step 2) is performed to form an N-type well region 103 in the P-type epitaxial layer 102 .
[0064] Specifically, an N-type well region 103 is formed in the P-type epitaxial layer 102 by ion implantation without a mask, and the doping concentration of the N-type well region 103...
Embodiment 2
[0088] Such as Figure 13 As shown, this embodiment provides a method for manufacturing a switching device for lithium battery protection, the basic steps of which are as in Embodiment 1, wherein the difference from Embodiment 1 is that step 2) of this embodiment includes:
[0089] Step 2-1), making a mask on the P-type epitaxial layer 102;
[0090] In step 2-2), an N-type well region 103 is formed in the P-type epitaxial layer 102 by ion implantation based on a mask, so that the gap between the N-type well region 103 and the subsequently prepared metal silicide 131 is covered. The P-type epitaxial layer 102 is isolated.
[0091] Such as Figure 13 As shown, this embodiment also provides a switching device for lithium battery protection, the basic structure of which is the same as that of Embodiment 1, wherein the difference from Embodiment 1 lies in that: the N-type well region 103 and the metal silicide The objects 131 are isolated by the P-type epitaxial layer 102 .
[...
Embodiment 3
[0094] Such as Figure 14 As shown, this embodiment provides a method for manufacturing a switching device for lithium battery protection, the basic steps of which are as in Embodiment 1, where the difference from Embodiment 1 lies in:
[0095] Step 1) also includes the step of forming an STI isolation region 121 in the P-type epitaxial layer 102, the STI isolation region 121 is located between the two gate structures 104 fabricated subsequently, and the N-type drift region prepared subsequently Region 106 surrounds the STI isolation region 121 . as well as
[0096] Step 2) includes:
[0097] Step 2-1), making a mask on the P-type epitaxial layer 102;
[0098] In step 2-2), an N-type well region 103 is formed in the P-type epitaxial layer 102 by ion implantation based on a mask, so that the gap between the N-type well region 103 and the subsequently prepared metal silicide 131 is covered. The P-type epitaxial layer 102 is isolated.
[0099] Such as Figure 14 As shown, t...
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