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A switch device for lithium battery protection and manufacturing method thereof

A technology for switching devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of large internal resistance and large area in the drift region of MOSFETs, and achieve low conduction internal resistance and reduced resistance , Guarantee the effect of constant pressure

Active Publication Date: 2020-05-19
宁波宝芯源功率半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a switching device for lithium battery protection and its manufacturing method, which is used to solve the large internal resistance of the drift region and the area of ​​the MOSFET for lithium battery protection in the prior art. bigger problem

Method used

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  • A switch device for lithium battery protection and manufacturing method thereof
  • A switch device for lithium battery protection and manufacturing method thereof
  • A switch device for lithium battery protection and manufacturing method thereof

Examples

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Embodiment 1

[0055] Such as Figure 2 to Figure 10 As shown, this embodiment provides a manufacturing method for a switching device for lithium battery protection, the manufacturing method includes steps:

[0056] Such as figure 2 As shown, step 1) is performed first, providing a P+ type substrate 101, and forming a P− type epitaxial layer 102 on the surface of the P+ type substrate 101.

[0057] Specifically, the doping concentration of the P+ type substrate 101 is 1e18-1e19 / cm 3 , using an epitaxial method to form a P-type epitaxial layer 102 on the surface of the P+ type substrate 101, and the doping concentration of the P-type epitaxial layer 102 is 1e16-1e17 / cm 3 .

[0058] Such as figure 2 As shown, then step 2) is performed to form an N-type well region 103 in the P-type epitaxial layer 102 .

[0059] Specifically, an N-type well region 103 is formed in the P-type epitaxial layer 102 by ion implantation without a mask, and the doping concentration of the N-type well region 10...

Embodiment 2

[0081] Such as Figure 12 As shown, this embodiment provides a method for manufacturing a switching device for lithium battery protection, the basic steps of which are as in Embodiment 1, wherein the difference from Embodiment 1 is that step 2) of this embodiment includes:

[0082] Step 2-1), making a mask on the P-type epitaxial layer 102;

[0083] In step 2-2), an N-type well region 103 is formed in the P-type epitaxial layer 102 by ion implantation based on a mask, so that the gap between the N-type well region 103 and the subsequently prepared body electrode 120 is covered. The P-type epitaxial layer 102 is isolated.

[0084] Such as Figure 12 As shown, this embodiment also provides a switching device for lithium battery protection, the basic structure of which is the same as that of Embodiment 1, wherein the difference from Embodiment 1 lies in: the N-type well region 103 and the body region The electrodes 120 are isolated by the P-type epitaxial layer 102 .

[0085]...

Embodiment 3

[0087] Such as Figure 13 As shown, this embodiment provides a method for manufacturing a switching device for lithium battery protection, the basic steps of which are as in embodiment 1, wherein the difference from embodiment 1 is that step 1) is also included in the P- The step of forming the STI isolation region 121 in the type epitaxial layer 102, the STI isolation region 121 is located between the two gate structures 104 fabricated subsequently, and the N-type drift region 106 prepared subsequently is surrounded by the STI isolation region 121 .

[0088] Such as Figure 13 As shown, this embodiment also provides a switching device for lithium battery protection, its basic structure is as in embodiment 1, wherein, the difference from embodiment 1 is that: the P-type epitaxial layer 102 is also formed with The STI isolation region 121 is located between the two gate structures 104 , and the N-type drift region 106 is surrounded by the STI isolation region 121 .

[0089] ...

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Abstract

The invention provides a switching device used for lithium battery protection and a manufacturing method thereof. The switching device comprises a P+ type substrate and a P- type epitaxial layer, an N type well region, two P type well regions, two gate structures, a shared N- type drifting region, an N type source region and a P+ type contact region, a dielectric layer and an electrode material, wherein the shared N- type drifting region is formed between the two gate structures; two source region contact windows and a body region contact window are formed in the dielectric layer, and the P- type epitaxial layer in the body region contact window is removed to form a groove until the P+ type substrate; and the source region contact windows, the body region contact window and the groove are filled with the electrode material. An MOSFET device is constructed by adopting a drifting region sharing manner, so that the region resistance of the drifting region can be greatly reduced, and meanwhile voltage resistance is guaranteed to be unchanged. One of source region electrodes is introduced to the back of a chip in a body region electrode manner, and can be welded with a base during packaging, so that a wire bonding resistor is omitted, and the manufacturing method is extremely effective in an extremely low internal resistance requirement.

Description

technical field [0001] The invention relates to a lithium battery protection circuit, in particular to a switching device for lithium battery protection and a manufacturing method thereof. Background technique [0002] With the advancement of science and technology and social development, portable devices such as mobile phones, notebook computers, MP3 players, PDAs, handheld game consoles, and digital cameras have become more and more popular. Many of these products are powered by lithium-ion batteries. Lithium-ion batteries It is divided into two types: primary battery and secondary battery. At present, non-rechargeable primary lithium batteries are mainly used in some portable electronic products with low power consumption, while notebook computers, mobile phones, PDAs, digital cameras, etc. consume a lot of power. Rechargeable secondary batteries, namely lithium-ion batteries, are used in electronic products. [0003] Compared with nickel-cadmium and nickel-metal hydride...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8234H01L21/28H01L27/088H01L29/06H01L29/417
CPCH01L21/8234H01L27/088H01L29/0684H01L29/41741
Inventor 王凡
Owner 宁波宝芯源功率半导体有限公司
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