Crystal growth method and application thereof

Abstract

The invention provides a crystal growth method and application thereof. The crystal growth method comprises the following steps: S1, uniformly mixing a crystal growth material with an ytterbium ion compound, and pressing the mixture into a tablet; S2, carrying out laser sintering growth on the tablet, so as to obtain microcrystals or nanocrystals; S3, adjusting the size of a laser spot to enable the laser spot to cover the surface of a whole seed crystal, and carrying out in situ annealing to obtain crystals. The crystal growth method can be used for preparing ceramic. According to the research on the crystal growth method which is high in efficiency, high in stability and low in equipment cost, a step-by-step laser sintering method is adopted; the laser power density required in the laser sintering process in the second step is much lower than that required in the laser sintering process in the first step, so that the laser power can be greatly reduced, and crystal growth equipment is very easy to satisfy; furthermore, energy consumption is reduced.

Description

technical field [0001] The invention relates to the field of crystal preparation, more specifically, to a high-quality crystal growth method and its application. Background technique [0002] The process in which a substance transforms from gas phase, liquid phase, and solid phase under certain conditions such as temperature, pressure, concentration, medium, and pH to form crystals of a specific linear size is called crystal growth. [0003] Crystal growth methods mainly include pulling method, heat exchange method, guided mode method, crucible descent method, kyropoulos method, temperature gradient method, etc. In the pulling method, high-temperature refractory oxides, such as zirconia and alumina, are usually used as insulation materials to make the furnace body a weak oxidizing atmosphere, which has an oxidizing effect on the crucible, and is easy to cause contamination to the melt, forming in the crystal Defects such as inclusions, and for those materials that are highl...

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Problems solved by technology

In the Kyropoulos method, after the top seed crystal is seeded, the crystal is not pulled upward but is soaked in the melt to grow the crystal. The grown crystal does not contact the crucible, the dislocation density is low, and the single crystal is good, but the crystal growth is strongly dependent on artificial Accumulation of experience, poor crystal consistency and yield

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