Quantum dot structure and manufacturing method thereof, and quantum dot light emitting diode and manufacturing method thereof

A technology for quantum dot light-emitting and manufacturing methods, which is applied in the fields of light-emitting materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., and can solve problems such as unfavorable preparation of high-performance quantum dot light-emitting diodes, quantum dot collapse, lattice mismatch, etc. , to achieve the effect of ensuring monodispersity, eliminating compressive stress and excellent structural performance

Inactive Publication Date: 2017-05-31
AAC TECH NANJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this approach is effective, however, often due to the lattice mismatch between the quantum dots and the shell semiconductor material, s...

Method used

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  • Quantum dot structure and manufacturing method thereof, and quantum dot light emitting diode and manufacturing method thereof
  • Quantum dot structure and manufacturing method thereof, and quantum dot light emitting diode and manufacturing method thereof
  • Quantum dot structure and manufacturing method thereof, and quantum dot light emitting diode and manufacturing method thereof

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Embodiment Construction

[0038] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0039] see figure 1 , is a schematic structural diagram of the quantum dot light-emitting diode provided by the present invention. The quantum dot light emitting diode 100 includes a substrate 1 , a hole injection layer 2 , a hole transport layer 3 , a quantum dot light emitting layer 4 , an electron transport layer 5 and a cathode 6 stacked in sequence.

[0040] The substrate 1 includes a substrate 11 and a conductive anode 12 deposited on the substrate 11 . The substrate 11 is a rigid substrate or a flexible substrate, wherein the rigid substrate is glass, silicon wafer or other rigid materials; the flexible substrate is a plastic substrate, aluminum foil, ultra-thin metal or ultra-thin glass. The conductive anode 12 is formed of ITO, graphene, indium gallium zinc oxide or other conductive materials, and is deposited on the surface of the substrate ...

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Abstract

The invention discloses a quantum dot structure. The quantum dot structure comprises a quantum dot nucleus, a strain compensation layer coating the quantum dot nucleus, and a shell layer coating the strain compensation layer. The lattice matching degree between the quantum dot nucleus and the shell layer or the strain compensation layer is higher than 88%. According to the quantum dot structure provided by the invention, the pressure stress produced by a semiconductor material in the shell layer during growth can be eliminated, and the low stress demand of the quantum dot nucleus can be guaranteed. The invention further provides a manufacturing method of the quantum dot structure, a quantum dot light emitting diode adopting the quantum dot structure, and a manufacturing method of the quantum dot light emitting diode.

Description

[0001] 【Technical field】 [0002] The invention relates to the technical field of light emitting diodes, in particular to a quantum dot structure, a manufacturing method of the quantum dot structure, a quantum dot light emitting diode and a manufacturing method thereof. [0003] 【Background technique】 [0004] Light-emitting diodes are increasingly being used in modern display technologies and offer many advantages over traditional light sources such as low energy consumption, long lifetime, robustness, small size and fast switching. General light emitting diodes are made of inorganic compound semiconductors that emit monochromatic light at a frequency consistent with a band gap, and cannot emit mixed colored light, such as white light. White light-emitting diodes can be used as light sources, and full-color displays can be produced using current color filter technology. One approach for producing white light is to combine multiple LEDs to simultaneously emit three primary col...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00C09K11/883B82Y20/00B82Y40/00Y10S977/774Y10S977/824Y10S977/818Y10S977/896Y10S977/892Y10S977/95
Inventor 谢再锋
Owner AAC TECH NANJING
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