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Improved groove-type Schottky rectifier device and manufacturing method thereof

A rectifier device and manufacturing method technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of large forward conduction voltage drop, etc., and achieve low pinch-off voltage, large contact area between metal and semiconductor, and pinch-off speed fast effect

Inactive Publication Date: 2017-05-31
杭州易正科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide an improved trench type Schottky rectifier device, which can improve the reverse voltage resistance and improve the problem of large forward conduction voltage drop caused by small trench distance

Method used

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  • Improved groove-type Schottky rectifier device and manufacturing method thereof
  • Improved groove-type Schottky rectifier device and manufacturing method thereof
  • Improved groove-type Schottky rectifier device and manufacturing method thereof

Examples

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no. 1 example

[0032] Such as figure 1 As shown, the improved trench Schottky rectifier device of this embodiment includes: a first conductivity type substrate 10, a first conductivity type conduction layer 20 formed on the first conductivity type substrate 10, formed The trench 30 in the upper surface layer of the first conductivity type conduction layer 20, the conductive polysilicon 40 filling the trench 30, and the gate insulating layer 50 formed between the trench 30 and the conductive polysilicon 40, The metal electrode layer 60 formed on the surface of the first conductivity type conduction layer 20, the second conductivity type region 70 is provided in the upper surface layer of the first conductivity type conduction layer 20 between two adjacent grooves 30, the The metal electrode layer 60 is disposed on the first conductivity type conduction layer 20 , the conductive polysilicon 40 and the second conductivity type region 70 .

[0033] In this embodiment, the first conductivity typ...

no. 2 example

[0047] Such as figure 2 As shown, the trench type Schottky rectifier device of this embodiment is basically the same as the technical solution of the first embodiment, the difference is that the doping concentration of the second conductivity type region 70 in this embodiment is higher than that of the first conductivity type. The enhanced region 90 of the first conductivity type of the conduction layer 20, the enhanced region 90 of the first conductivity type is formed directly under the region 70 of the second conductivity type, and does not affect the lateral depletion of the PN junction and the MOS structure to pinch off the Schottky barrier region. In this case, that is, without affecting the reverse withstand voltage capability, the carrier concentration of the conductive layer is increased, and the forward conduction voltage drop is reduced.

[0048] Preferably, the enhancement region 90 of the first conductivity type is not in contact with the second conductivity type...

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Abstract

The invention discloses an improved groove-type Schottky rectifier device and a manufacturing method thereof. The improved groove-type Schottky rectifier device disclosed by the invention comprises a first conduction type substrate, a first conduction type conducting layer, grooves, conducting polycrystalline silicon, a gate insulator layer and a metal electrode layer, wherein a second conduction type area is arranged inside the upper surface layer of the first conduction type conducting layer between every two adjacent grooves; and the metal electrode layer is arranged on the first conduction type conducting layer, the conducting polycrystalline silicon and the second conduction type area. The backward voltage resisting capacity is improved, and meanwhile the problem that the forward voltage drop becomes large caused by small groove distance is solved.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a trench type Schottky rectifier device and a manufacturing method thereof. [0002] technical background [0003] Schottky diodes have been used in power supply applications for decades as rectification devices. Compared with PN junction diodes, Schottky diodes have the advantages of low forward turn-on voltage and fast switching speed, which makes them very suitable for switching power supplies and high-frequency applications. The reverse recovery time of the Schottky diode is very short, which is mainly determined by the parasitic capacitance of the device, not by the minority carrier recombination time like the PN junction diode. Therefore, the Schottky diode rectifier device can effectively reduce switching power loss. [0004] The traditional Schottky rectifier device adopts the mesa technology, and the metal (such as aluminum, molybdenum) is combined with the doped semiconductor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06
CPCH01L29/872H01L29/0607H01L29/0684H01L29/8725
Inventor 李风浪
Owner 杭州易正科技有限公司
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