p-GaN enhanced AlGaN/GaN high-electron-mobility transistor
A high electron mobility, enhanced technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of threshold voltage and output current reduction, device avalanche breakdown, current collapse effect, etc., and achieve the improvement of breakdown voltage , The effect of increasing the peak value of the electric field and increasing the drop of the peak electric field
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[0030] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, a detailed description will be given below in conjunction with the accompanying drawings and specific embodiments.
[0031] Aiming at the problem that there is a peak electric field at the gate edge of the existing p-GaN enhanced AlGaN / GaN high electron mobility transistor, the present invention provides a novel p-GaN enhanced AlGaN / GaN high electron mobility transistor with a partial intrinsic GaN cap layer. Electron mobility transistors.
[0032] Its structure is as figure 1 As shown, it mainly includes: semi-insulating substrate 0; heteroepitaxially grown AlN nucleation layer 1 on the semi-insulating substrate; GaN buffer layer 2 epitaxially grown on the AlN nucleation layer; epitaxially grown on the GaN buffer layer AlGaN barrier layer 3; p-type GaN dielectric layer 4, drain 5 and source 6 located on the AlGaN barrier layer; gate 7 located on t...
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