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Bismuth germanate monocrystal growing method

A growth method and bismuth germanate technology, applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of difficulty in further improving crystal quality, slow and uneven component diffusion, uneven temperature distribution, etc. Improve the resistance to radiation damage, facilitate the diffusion of components, and improve the effect of radial symmetry

Inactive Publication Date: 2017-05-31
FIRST RARE MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the crucible descent method has the disadvantages of uneven temperature distribution in the horizontal direction, weak natural convection at the growth interface, slow and uneven diffusion of components, and slow growth rate, making it difficult to further improve crystal quality.

Method used

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  • Bismuth germanate monocrystal growing method
  • Bismuth germanate monocrystal growing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036]1) Mix bismuth oxide with a purity of 5N and germanium oxide powder with a purity of 5N according to the stoichiometric ratio (ie, molar ratio) of 2:3 and mix them evenly. After high-temperature compounding, they are rapidly cooled to obtain block bismuth germanate polycrystalline After crushing it through a 50-mesh sieve, weigh four parts of the sieve with a mass of 11kg, and press it into four cylindrical bismuth germanate cakes under the conditions of 180°C and 150MPa. The diameter is slightly smaller than 76.2mm.

[0037] 2) Put the seed crystals of the [001] orientation into the bottoms of four platinum crucibles 4 with a diameter of 76.2 mm, and then put the above-mentioned pressed bismuth germanate cakes into the four platinum crucibles with seed crystals respectively In 4, the bismuth germanate cake is placed on the seed crystal, the platinum crucible 4 is sealed, and placed in four crucible guide tubes 34 respectively, silicon oxide powder is filled between the ...

Embodiment 2

[0043] 1) Mix bismuth oxide with a purity of 6N and germanium oxide powder with a purity of 6N according to the stoichiometric ratio (ie, molar ratio) of 2:3 and mix them evenly. After high-temperature compounding, they are rapidly cooled to obtain block bismuth germanate polycrystalline After crushing it through a 100-mesh sieve, weigh two portions of 15.5kg undersize, and press it into two cylindrical bismuth germanate cakes under the conditions of 25°C and 350MPa. The cake diameter was slightly less than 101.6 mm.

[0044] 2) Put the seed crystals of the [110] orientation into the bottoms of two platinum crucibles 4 with a diameter of 101.6 mm, and then put the pressed bismuth germanate cake into the above two platinum crucibles with seed crystals respectively In 4, the bismuth germanate cake is placed on the top of the seed crystal, the platinum crucible 4 is sealed, and placed in two crucible guide tubes 34 respectively, zirconia powder is filled between the platinum cruc...

Embodiment 3

[0050] 1) Mix bismuth oxide with a purity of 5N and germanium oxide powder with a purity of 6N according to the stoichiometric ratio (ie, molar ratio) of 2:3 and mix them evenly. After high-temperature compounding, they are rapidly cooled to obtain block bismuth germanate polycrystalline After crushing it through an 80-mesh sieve, weigh ten portions of 7.5kg undersieve, and press it into ten cylindrical bismuth germanate cakes under the conditions of 50°C and 350MPa. The cake diameter is slightly less than 60mm.

[0051] 2) Put the seed crystals of the [001] orientation into the bottoms of 10 platinum crucibles 4 with a diameter of 60 mm, and then put the above-mentioned compressed bismuth germanate cakes into the above 10 platinum crucibles 4 with seed crystals respectively In the process, the bismuth germanate cake is placed on the seed crystal, the platinum crucible 4 is sealed, and placed in ten crucible guide tubes 34 respectively, and alumina powder is filled between the...

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Abstract

The invention discloses a bismuth germanate monocrystal growing method, and belongs to the field of crystal growing. The bismuth germanate monocrystal is grown by a method of combining a rotatable multi-crucible technology and a vertical gradient solidification method. The method provided by the invention has the advantages that the radial symmetry of a crystal growing interface temperature field is improved; the growth quality of the bismuth germanate monocrystal is improved; meanwhile, the ingredient diffusion is facilitated; the uniform distribution of ingredients is promoted; the growth velocity of the bismuth germanate monocrystal is accelerated. The program control degree is high; the temperature accuracy is high; the fluctuation is small; the repeatability is high; the yield is high; the cost is low.

Description

technical field [0001] The invention belongs to the field of crystal growth, in particular to a method for growing a bismuth germanate single crystal. Background technique [0002] Bismuth germanate Bi 4 Ge 3 o 12 (BGO) is a colorless transparent crystal with a cubic structure, with a melting point of 1050°C and a density of 7.13g / cm 3 , has the advantages of strong cut-off ability, high scintillation efficiency, excellent energy resolution, no deliquescence, and good processing performance. Under the excitation of high-energy particles or rays, it can emit green fluorescence with a peak at 480nm. As the scintillation crystal with the largest supply at present, BGO is widely used in high-energy physics, nuclear physics, medical testing, safety inspection and mineral exploration. The BGO crystal after doping also has good laser, magneto-optic and electro-optic properties. [0003] At present, the methods for producing bismuth germanate single crystal mainly include the p...

Claims

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Application Information

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IPC IPC(8): C30B29/32C30B11/00
CPCC30B29/32C30B11/003
Inventor 刘运连朱刘狄聚青胡智向文崇斌
Owner FIRST RARE MATERIALS CO LTD
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