Epitaxial wafer of green light emitting diode and growth method thereof

A technology of a light-emitting diode and a growth method, which is applied to the epitaxial wafer of a green light-emitting diode and its growth field, can solve the problems of large lattice mismatch, low luminous efficiency, inability of a P-type electron blocking layer to effectively suppress electron overflow, and the like, To achieve the effect of improving lattice mismatch, improving luminous efficiency, and facilitating electron overflow

Active Publication Date: 2019-11-29
HC SEMITEK ZHEJIANG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The In component content in the InGaN quantum well layer of the blue LED epitaxial wafer is about 20%, and the In component content in the InGaN quantum well layer of the green LED epitaxial wafer is about 30%. The higher In component content leads to multiple quantum wells layer (InGaN quantum well layer) and the P-type electron blocking layer (AlGaN layer) have a large lattice mismatch, the P-type electron blocking layer cannot effectively suppress electron overflow, and the luminous efficiency is low

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  • Epitaxial wafer of green light emitting diode and growth method thereof
  • Epitaxial wafer of green light emitting diode and growth method thereof
  • Epitaxial wafer of green light emitting diode and growth method thereof

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Embodiment 1

[0035] An embodiment of the present invention provides an epitaxial wafer of a green light emitting diode, see figure 1 , the epitaxial wafer includes a sapphire substrate 1, and a buffer layer 2, an undoped GaN layer 3, an N-type layer 4, a multi-quantum well layer 5, a P-type electron blocking layer 6, P-type layer 7 and P-type contact layer 8 .

[0036] In this example, see figure 2 , the P-type electron blocking layer 6 includes several sublayers stacked in sequence, and the sublayers include In x al 1-x N layer 61 and stacked on In x al 1-x In on N layer 61 y al z Ga 1-y-z N layer 62, 0

[0037] Optionally, the thickness of the P-type electron blocking layer may be less than 100 nm, so as not to hinder hole injection into the multiple quantum well layer.

[0038] Optionally, In x al 1-x The thickness of the N layer can be 1-20nm, In y al z Ga 1-y-z The thickness of the N layer can be 1-20 nm, so as to avoid adverse effects on the lattice ...

Embodiment 2

[0065] An embodiment of the present invention provides a method for growing an epitaxial wafer of a green light-emitting diode, which is suitable for growing the epitaxial wafer provided in Embodiment 1, see Figure 4 , the growth method includes:

[0066] Step 201: Provide a sapphire substrate.

[0067] Step 202: growing a buffer layer, an undoped GaN layer, an N-type layer, a multi-quantum well layer, a P-type electron blocking layer, a P-type layer and a P-type contact layer sequentially on the sapphire substrate.

[0068] In this embodiment, the P-type electron blocking layer includes several sequentially stacked sublayers, and the sublayers include In x al 1-x N layers and stacked on In x al 1-x In on N layer y al z Ga 1-y-z N layers, 0

[0069] Specifically, the buffer layer can be a GaN layer, the N-type layer can be a Si-doped GaN layer, the multi-quantum well layer can include alternately stacked InGaN quantum well layers and GaN quantum bar...

Embodiment 3

[0099] The embodiment of the present invention provides a method for growing an epitaxial wafer of a green light-emitting diode, which is a concrete realization of the growth method provided in Embodiment 2, and is realized with high-purity hydrogen (H 2 ) or nitrogen (N 2 ) as carrier gas, trimethylgallium (TMGa), trimethylaluminum (TMAl), trimethylindium (TMIn) and ammonia (NH 3 ) as Ga, Al, In and N sources respectively, with silane (SiH 4 ), Magnesium (Cp 2 Mg) as N and P type dopants respectively.

[0100] Specifically, see Figure 5 , the growth method includes:

[0101] Step 301: The temperature of the substrate is first raised to 500°C, then raised to 800°C and stabilized for 30s, then raised to 1000°C and stabilized for 30s, then raised to 1230°C and stabilized for 10 minutes, and then heat-treated in a pure hydrogen atmosphere.

[0102] It should be noted that the purpose of heat treatment is to clean the substrate surface.

[0103] Step 302: Lower the temperat...

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Abstract

The invention discloses a green light emitting diode epitaxial wafer and a growth method thereof, which belong to the technical field of semiconductors. The epitaxial wafer comprises a sapphire substrate, and a buffer layer, an undoped GaN layer, an N-type layer, a multi-quantum well layer, a P-type electron barrier layer, a P-type layer and a P-type contact layer stacked on the sapphire substrate sequentially, wherein the P-type electron barrier layer comprises a plurality of sequentially-stacked sub layers, and each sub layer comprises an In<x>Al<1-x>N layer and an In<y>Al<z>Ga<1-y-z>N layer stacked on the In<x>Al<1-x>N layer, 0<x<1, 0<y<1, and 0<z<1. The In component in the P-type electron barrier layer can improve lattice mismatch between the P-type electron barrier layer and an InGaN quantum well layer, electron overflow is facilitated, the hole injection efficiency is added, and the light emitting efficiency of the green light emitting diode is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a green light emitting diode and a growth method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. The epitaxial wafer is the raw material for the chip inside the LED. [0003] GaN-based epitaxial wafers usually include a sapphire substrate, a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, a P-type electron blocking layer, a P-type GaN layer, and a P-type GaN layer stacked on the sapphire substrate in sequence. type contact layer. Wherein, the multi-quantum well layer includes an InGaN quantum well layer and a GaN quantum barrier layer, and the P-type electron blocking layer is an AlGaN layer. [0004] In the process of realizing the present invention, the inventor finds that there ar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/14H01L33/32
CPCH01L33/0066H01L33/0075H01L33/145H01L33/325
Inventor 杨兰万林胡加辉
Owner HC SEMITEK ZHEJIANG CO LTD
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