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Metal etching device and method

An etching device and metal technology, which is used in the manufacture/processing of electromagnetic devices to achieve the effect of improving the yield

Active Publication Date: 2017-05-17
江苏鲁汶仪器股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Metal etching device and method

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no. 1 example

[0037] According to the first embodiment of the present invention, the metal etching device includes a reactive ion plasma etching chamber 10, an ion beam etching (IBE) chamber 11, a coating chamber 12, a vacuum transport chamber 13, a vacuum Transition chamber 14 ( figure 1 Not shown in ) and sample loading chamber 15. Wherein, the vacuum transition chamber 14 is respectively connected with the sample loading chamber 15 and the vacuum transmission chamber 13 in a communicable manner. The reactive ion plasma etching chamber 10 , the ion beam etching chamber 11 , and the coating chamber 12 are respectively connected to the vacuum transmission chamber 13 in a communicable manner. In addition, each of the above-mentioned chambers may also be multiple. figure 1 , figure 2 Two ion beam etching chambers 11 are shown in .

[0038] The metal etching device may also include an atmospheric pressure transmission chamber 16 ( figure 1 not shown in ), which are respectively connected...

no. 2 example

[0043] According to the second embodiment of the present invention, the metal etching device also includes a slice chamber 17, a vacuum transition chamber 14' ( figure 1 not shown in ), wherein, the taking-out chamber 17 is connected to the vacuum transition chamber 14' and the vacuum transfer chamber 13 in turn in a communicable manner. In addition, the metal etching device may also include a normal pressure transmission chamber 16' ( figure 1 not shown in ), which are respectively connected to the film taking chamber 17 and the vacuum transition chamber 14' in a communicable manner. Except for the above differences, the structures of other parts are the same as those of the first embodiment, and will not be described in detail again.

[0044] According to another aspect of the present invention, a metal etching method is provided. A detailed description will be given below in conjunction with the accompanying drawings. Figure 4 It is a flowchart showing the process flow ...

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Abstract

The invention discloses a metal etching device and method which can be used in a large-scale integrated circuit industrial manufacturing environment. Particularly, by means of the metal etching device and method, in a vacuum uninterrupted environment, magnetic tunnel junctions of a magnetic random access memory (MRAM) are subjected to etching and etching post-processing in a reactive-ion plasma etching chamber and an ion beam etching chamber and then subjected to coating surface protection in a coating chamber, so that the side wall of the magnetic tunnel junctions are free of metal contamination after being etched, the chemical and physical structures of the magnetic tunnel junctions are consistent with the chemical and physical structures before etching, the magnetic tunnel junctions can be taken out from etching equipment and not destroyed by the air environment, and the yield of MRAM devices is effectively increased. In addition, the metal etching device and method are also applicable to etching of resistive random access memories and other metals.

Description

technical field [0001] The present invention relates to an etching device and method, in particular to a metal etching device and method. Background technique [0002] With the further proportional reduction of the feature size of semiconductor devices, the traditional flash memory technology will reach the limit of size. In order to further improve the performance of devices, technicians began to actively explore new structures, new materials, and new processes. In recent years, various new types of non-volatile memories have been developed rapidly. Among them, magnetic random access memory (MRAM), with its high-speed read and write capabilities of static random access memory (SRAM), and high integration of dynamic random access memory (DRAM), has far lower power consumption than DRAM, and compared to flash Memory (Flash), with the advantages of no performance degradation as the use of time increases, has attracted more and more attention from the industry, and is conside...

Claims

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Application Information

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IPC IPC(8): C23F4/00H01L43/12
CPCC23F4/00H10N50/01
Inventor 不公告发明人
Owner 江苏鲁汶仪器股份有限公司
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