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Manufacturing method of hub type electroplated ultrathin diamond abrasive cutting wheel

A technology of diamond cutting and manufacturing methods, which is applied in the direction of electrolytic coatings and coatings, can solve the problems of broken knives, low strength, and high stress on cutting blades, so as to solve the problem of cutting broken knives, ensure tissue uniformity and dimensional accuracy, and ensure The effect of outer circle accuracy and roundness

Active Publication Date: 2017-05-10
ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the hub-type electroplated ultra-thin diamond cutting wheel is affected by many factors, and the stress of the cutting blade is too large and the strength is too low. In practical applications, serious quality problems of frequent interruption of the cutting process occur.

Method used

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  • Manufacturing method of hub type electroplated ultrathin diamond abrasive cutting wheel
  • Manufacturing method of hub type electroplated ultrathin diamond abrasive cutting wheel
  • Manufacturing method of hub type electroplated ultrathin diamond abrasive cutting wheel

Examples

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Effect test

Embodiment 1

[0046] A method for manufacturing a hub type electroplated ultra-thin diamond cutting grinding wheel with a thickness of 0.010 mm for cutting semiconductor gallium arsenide wafers, comprising the following steps:

[0047] (1) Chemically plate the grinding wheel substrate

[0048] Finish the grinding wheel base to the required size and precision, conduct insulation protection treatment on the non-plated surface, and then perform chemical plating process on the grinding wheel base;

[0049] (2) Composite electrodeposition

[0050]Configure nickel sulfamate plating solution: Nickel sulfamate plating solution is based on nickel sulfamate, nickel bromide, sodium hypophosphite, boric acid, ethoxylated propynyl alcohol, p-toluenesulfonamide, sulfosuccinic acid di Amyl ester sodium salt, deionized water with conductivity below 5μs / cm, M1 / 2 diamond abrasive in a weight ratio of 40:0.6:0.1:4.5:0.6:0.03:0.1:90:1 configuration, nickel sulfamate, Nickel bromide and boric acid are analyti...

Embodiment 2

[0060] A method for manufacturing a hub-shaped electroplated ultra-thin diamond cutting wheel for cutting semiconductor silicon wafers with a thickness of 0.030 mm, comprising the following steps:

[0061] (1) Chemically plate the grinding wheel substrate

[0062] Select the aluminum alloy grinding wheel base, the finishing flatness is 0.002mm, the inner hole precision is IT5 level, the non-plated surface is treated with insulation protection, and then the grinding wheel base is treated with chemical plating process;

[0063] (2) Composite electrodeposition

[0064] Configure nickel sulfamate electroplating solution: nickel sulfamate electroplating solution according to nickel sulfamate, nickel bromide, sodium hypophosphite, boric acid, glycerol monopropynyl ether, o-benzoic acid sulfonimide, sodium ethylhexyl sulfate , Deionized water with a conductivity below 5μs / cm, the weight ratio of M3 / 5 diamond abrasive is 50:0.5:0.08:4.0:0.4:0.01:0.2:85:0.1 configuration, nickel sulfa...

Embodiment 3

[0072] A method for manufacturing a hub type electroplated ultra-thin diamond cutting wheel for cutting semiconductor silicon wafers with a thickness of 0.080mm, comprising the following steps:

[0073] Configure nickel sulfamate plating solution: Nickel sulfamate plating solution is based on nickel sulfamate, nickel bromide, sodium hypophosphite, boric acid, diethylpropynylamine, propenyl sulfonic acid, lauryl ether sulfate, conductivity The weight ratio of deionized water below 5μs / cm and M4 / 8 diamond abrasive is 60:0.3:0.05:3.5:0.7:0.02:0.3:80:0.5. Nickel sulfamate, nickel bromide and boric acid are all analytically pure , 10rpm forward stirring for 3min; 180rpm reverse stirring for 20s, forward and reverse stirring alternately, stirring evenly; the electroplating current density is 3.5A / dm during composite electrodeposition 2 , the temperature is 55~60℃, the pH value is 4.0~4.5, and the electroplating time is 105min to form a Ni-diamond composite layer on the grinding whee...

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Abstract

The invention discloses a manufacturing method of a hub type electroplated ultrathin diamond abrasive cutting wheel. The method comprises the steps that a high-precision aluminum alloy matrix is subjected to chemical plating treatment and placed into an electroplating solution containing diamond abrasive materials, the evenly-suspended diamond abrasive materials are wrapped by a plating layer during reduction of a cathode of anode nickel ions under the effect of a direct current electric field, and a composite plating layer with the needed thickness is formed after uniform codeposition is kept for a certain period of time; and the hub type electroplated ultrathin diamond abrasive cutting wheel with the blade thickness of 0.010-0.150 mm is manufactured through the plating layer surface precise grinding, external circle grinding and blade reverse face microcorrosion treating processes. By the adoption of the phosphorous nickel aminosulfonate electroplating solution, by means of the hardness increasing effect of a hardening agent and the microstress effect of a stress removing agent, a low-stress high-hardness novel nickel-based binding agent is obtained, a blade of a cuter of the hub type electroplated ultrathin diamond abrasive cutting wheel has extremely low stress and high strength, and the problem that the cutter of the abrasive wheel is broken due to stress deformation or too low strength in practical application is avoided.

Description

technical field [0001] The invention belongs to the technical field of semiconductor precision machining, and relates to a precision machining tool for hard and brittle materials such as semiconductor silicon wafers and oxide wafers and a manufacturing method thereof, in particular to a manufacturing method of a hub-type electroplated ultra-thin cutting grinding wheel. Background technique [0002] In the cutting process of semiconductor and optoelectronic materials, it is necessary to use high-precision diamond grinding wheels to divide or groove the wafer. At present, the manufacturing process of diamond cutting grinding wheel mainly adopts hot pressing method or composite electrodeposition method, and hot pressing method is limited by its manufacturing process, so it is difficult to realize cutting grinding wheel with a thickness of 0.080mm or less. There are three kinds of diamond cutting wheels manufactured by composite electrodeposition method: hubless diamond cutting ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D15/00C25D3/12C25D5/44C25D5/48
CPCC25D3/12C25D5/44C25D5/48C25D15/00
Inventor 祝小威王永宝王战刘建双
Owner ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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