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An organic memory and pressing monitoring system and preparation method thereof

A technology of organic memory and monitoring system, applied in the field of optoelectronics, to achieve the effects of reducing cost, simple preparation process, and realizing small and portable

Active Publication Date: 2020-03-17
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since organic memory usually requires an external power supply input voltage to realize storage, this undoubtedly hinders its development to small and portable

Method used

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  • An organic memory and pressing monitoring system and preparation method thereof
  • An organic memory and pressing monitoring system and preparation method thereof
  • An organic memory and pressing monitoring system and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The organic friction memory structure schematic diagram of the present invention is as attached figure 1 As shown, including functional area A and functional area B. Functional area A is the triboelectric generation layer, and functional area B is the organic storage layer. The two electrode layers of the triboelectric layer are respectively connected to the gate and the source of the organic storage layer, and the left and right figures show the two connection modes.

[0026] Functional area A The triboelectric layer has two substrates, two electrodes, and two friction layers (one of the friction layers can be an electrode at the same time), such as figure 2 shown.

[0027] 21 and 26 are substrates, which can be hard substrates, such as plexiglass, or flexible substrates, such as polyethylene terephthalate PET;

[0028] 22 and 25 are electrode layers, and its material can adopt Cu etc.;

[0029] 23 and 24 are friction layers, the material of which can be selected ...

Embodiment 2

[0039] Figure 4 It is a schematic diagram of the organic photosensitive storage layer in functional area B, including a substrate with a gate electrode, an insulating layer, an organic photosensitive semiconductor layer, and source and drain electrodes.

[0040] 41 is a substrate with a gate electrode, which may be a glass substrate coated with ITO or a flexible substrate coated with ITO, such as a PET substrate.

[0041] 42 is an insulating layer, which can be polymer material polymethyl methacrylate (PMMA) or the like, or metal oxides, such as tantalum pentoxide Ta 2 o 5 ;

[0042] 43 is an organic photosensitive semiconductor layer, which can use pentacene, etc.;

[0043] 44 is a source electrode and a drain electrode, metals such as gold and silver, or transparent electrode materials such as ITO can be used;

[0044] Figure 5 It is the pressing storage characteristic of the floating gate structure organic friction memory, and its working principle is as follows (tak...

Embodiment 4

[0049] Figure 7 It is a schematic circuit diagram of a fully flexible wearable compression monitoring system, including the sensing and writing storage (and reset) system of the compression signal, this part is undertaken by the organic friction memory, and the output part of the stored signal, which is composed of a light-emitting Diode assumes. The pressed signal is induced by the triboelectric layer (functional area A) of the organic friction memory, and it is converted into electrostatic potential energy, which is applied to the organic storage layer (functional area B), and the signal is stored by the latter, and the stored signal will affect the organic energy. The size of the source-drain channel current of the storage layer (functional area B) affects the brightness change of the light-emitting diode connected above, so as to give a warning function. A switch converter (double-pole double-throw switch) is connected between functional area A and functional area B, whi...

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Abstract

The invention relates to an organic memory and a pressure monitoring system and a preparation method thereof. The organic memory is divided into two functional areas, a functional area A and a functional area B, and the functional area A is a triboelectric power generation function used for receiving and transmitting input mechanical signals area, and functional area B is the functional area for storing signals. The fully flexible wearable pressure monitoring system includes an organic friction memory for sensing and storing contact signals and a light emitting diode for reading the signals. Different from the traditional memory that requires an electrical signal of an external power supply to perform writing and erasing, the writing and erasing signal of the organic friction memory device of the present invention is mechanical stress. On this basis, the present invention proposes a wearable full-flexible press monitoring system, which can monitor confidential objects in real time, record the contact of outsiders to the confidential objects, and issue warnings. The invention has wide application prospects in the fields of security monitoring, intelligent devices, human-computer interaction systems and the like.

Description

technical field [0001] The invention relates to the field of optoelectronics, in particular to an organic memory, a pressing monitoring system and a preparation method thereof. Background technique [0002] Organic memory is a kind of organic electronic device, which is a kind of functional electronic device. According to the different materials of the storage functional layer and the corresponding storage mechanism, it is mainly divided into ferroelectric storage, polymer electret storage, floating gate storage and other storage. Ferroelectric storage uses ferromagnetic materials as storage functional materials, and the ferroelectric material is polarized under the action of voltage to realize the writing and storage state of the device; polymer electret devices use polymers as the insulating layer of the memory, and the gate The pole voltage makes the polymer electret polarized to achieve the purpose of storage; the floating gate memory device is based on the transistor s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/28H01L27/32H01L51/05H01L51/40H02N1/04
CPCH02N1/04H10K19/10H10K59/00H10K10/46H10K59/10
Inventor 董桂芳李晶
Owner TSINGHUA UNIV
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