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Organic memory and preparation method thereof

An organic memory and organic storage technology, applied in the field of optoelectronics, to achieve the effects of simple preparation process, small and portable, and functional integration.

Active Publication Date: 2020-05-08
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since organic memory usually requires an external power supply input voltage to realize storage, this undoubtedly hinders its development to small and portable

Method used

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  • Organic memory and preparation method thereof
  • Organic memory and preparation method thereof
  • Organic memory and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0026] The organic friction memory structure schematic diagram of the present invention is as attached figure 1 As shown, including functional area A and functional area B. Functional area A is the triboelectric generation layer, and functional area B is the organic storage layer. The two electrode layers of the triboelectric layer are respectively connected to the gate and the source of the organic storage layer, and the left and right figures show the two connection modes.

[0027] Functional area A The triboelectric layer has two substrates, two electrodes, and two friction layers (one of the friction layers can be an electrode at the same time), such as figure 2 shown.

[0028] 21 and 26 are substrates, which can be hard substrates, such as plexiglass, or flexible substrates, such as polyethylene terephthalate PET;

[0029] 22 and 25 are electrode layers, and its material can adopt Cu etc.;

[0030] 23 and 24 are friction layers, and its material can be selected from ...

Embodiment 2

[0040] Figure 4 It is a schematic diagram of the organic photosensitive storage layer in functional area B, including a substrate with a gate electrode, a source electrode and a drain electrode, an insulating layer, and an organic photosensitive semiconductor layer.

[0041] 41 is a substrate with a gate electrode, which may be a glass substrate coated with ITO or a flexible substrate coated with ITO, such as a PET substrate.

[0042] 42 is an insulating layer, which can be polymer material polymethyl methacrylate (PMMA), or metal oxide, such as tantalum pentoxide Ta2O5;

[0043] 43 is an organic photosensitive semiconductor layer, which can use pentacene, etc.;

[0044] 44 is a source electrode and a drain electrode, metals such as gold and silver, or transparent electrode materials such as ITO can be used;

Embodiment 3

[0046] Figure 5 It is the pressing storage characteristic of the floating gate structure organic friction memory, and its working principle is as follows (take P-type semiconductor, floating gate captures electrons as an example):

[0047] When there is no external force, the friction layers are separated from each other, and the voltage between the gate and the source is zero at this time. When there is an external force, the friction layers touch and rub against each other. Due to the electrostatic effect, one layer has a positive charge and the other layer has a negative charge, generating electrostatic potential energy. At this time, it is equivalent to applying a positive gate to the memory layer. Electrode voltage, under the action of this positive electric field, electrons in the semiconductor enter the floating gate layer and are trapped, leaving excess holes in the semiconductor, the channel current rises, and the signal writing is realized, and the current curve shi...

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Abstract

The invention relates to an organic memory, a pressing monitoring system and a preparation method thereof. The organic memory is divided into two functional areas, namely a functional area A and a functional area B, the functional area A is a friction power generation functional area for receiving and transmitting input mechanical signals, and the functional area B is a functional area for storingthe signals. A full-flexible wearable pressing monitoring system comprises an organic friction memory used for sensing and storing contact signals and a light emitting diode used for reading the signals. Different from a traditional memory which needs an electric signal of an external power supply to perform write-in and erasing, the write-in and erased signal of the organic friction memory device provided by the invention is mechanical stress. On the basis, the invention provides a wearable full-flexible pressing monitoring system which can monitor confidential objects in real time, record contact of outsiders with the confidential objects and give an alarm. The invention has a wide application prospect in the fields of safety monitoring, intelligent devices, man-machine interaction systems and the like.

Description

[0001] This application is a divisional application of 201510653906.8, the filing date of the original application is October 10, 2015, and the title of the invention is "An organic memory and pressing monitoring system and its preparation method". technical field [0002] The invention relates to the field of optoelectronics, in particular to an organic memory and a preparation method thereof. Background technique [0003] Organic memory is a kind of organic electronic device, which is a kind of functional electronic device. According to the different materials of the storage functional layer and the corresponding storage mechanism, it is mainly divided into ferroelectric storage, polymer electret storage, floating gate storage and other storage. Ferroelectric storage uses ferromagnetic materials as storage functional materials, and the ferroelectric material is polarized under the action of voltage to realize the writing and storage state of the device; polymer electret de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/28H01L27/32H01L51/05H01L51/40H01L21/77H02N1/04
CPCH02N1/04H10K19/10H10K59/00H10K10/46H10K59/10
Inventor 董桂芳李晶
Owner TSINGHUA UNIV
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